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Metal-oxide-semiconductor capacitors with ZrO2 dielectrics grown on In0.53Ga0.47As by chemical beam deposition
被引:34
作者:

Engel-Herbert, Roman
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Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

Hwang, Yoontae
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Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

Cagnon, Joel
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Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

Stemmer, Susanne
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Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
机构:
[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
关键词:
dielectric materials;
gallium arsenide;
III-V semiconductors;
indium compounds;
MOS capacitors;
zirconium compounds;
INTERFACE;
SURFACES;
STATES;
D O I:
10.1063/1.3204465
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
Zirconium oxide films were grown by chemical beam deposition with zirconium tert-butoxide as the source on (2x4) reconstructed, n-type In0.53Ga0.47As surfaces obtained after As decapping. Optimized growth conditions yielded ZrO2/In0.53Ga0.47As interfaces that were free of second phases. Capacitance-voltage (CV) measurements with different top electrodes showed a frequency dispersion of less than 2% per decade in accumulation. The accumulation capacitance and horizontal position of the CV curve were independent of temperature, while the inversion capacitance was strongly temperature dependent. Flat band voltages correlated with the work function of the metal electrode.
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