10 Gbit/s modulation of 1.3μm GaInNAs lasers up to 110°C

被引：31

作者：

Gustavsson, J. S. ^{[1
]}

Wei, Y. Q. ^{[1
]}

Sadeghi, M. ^{[1
]}

Wang, S. M. ^{[1
]}

Larsson, A. ^{[1
]}

机构：

[1] Chalmers Univ Technol, Dept Microtechnol & Nanosci, Photon Lab, SE-41296 Gothenburg, Sweden

来源：

ELECTRONICS LETTERS | 2006年 / 42卷 / 16期

关键词：

D O I：

10.1049/el:20061517

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Uncooled 10 Gbit/s operation of high-To ridge waveguide 1.3 mu m GaInNAs lasers at ambient temperatures as high as 110 degrees C is demonstrated. The low temperature sensitivity enables use of a constant modulation voltage to obtain clear open eyes with an extinction ratio exceeding 5 dB.

引用

页码：925 / 926

页数：2

共 9 条

[1] Floor free 10-Gb/s transmission with directly modulated GaInNAs-GaAs 1.35-μm laser for metropolitan applications [J].

Dagens, B ;

Martinez, A ;

Make, D ;

Le Gouezigou, W ;

Provost, JG ;

Sallet, V ;

Merghem, K ;

Harmand, JC ;

Ramdane, A ;

Thedrez, B .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2005, 17 (05) :971-973

[2] A quantitative study of radiative, Auger, and defect related recombination processes in 1.3-μm GaInNAs-based quantum-well lasers [J].

Fehse, R ;

Tomic, S ;

Adams, AR ;

Sweeney, SJ ;

O'Reilly, EP ;

Andreev, A ;

Riechert, H .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2002, 8 (04) :801-810

[3] GaInNAs: A novel material for long-wavelength semiconductor lasers [J].

Kondow, M ;

Kitatani, T ;

Nakatsuka, S ;

Larson, MC ;

Nakahara, K ;

Yazawa, Y ;

Okai, M ;

Uomi, K .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1997, 3 (03) :719-730

[4] Highly reliable and high-yield 1300-nm InGaAlAs directly modulated ridge Fabry-Perot lasers, operating at 10-Gb/s, up to 110 °C, with constant current swing [J].

Paoletti, R ;

Agresti, M ;

Bertone, D ;

Bianco, L ;

Bruschi, C ;

Buccieri, A ;

Campi, R ;

Dorigoni, C ;

Gotta, P ;

Liotti, M ;

Magnetti, G ;

Montangero, P ;

Morello, G ;

Rigo, C ;

Riva, E ;

Rossi, G ;

Soderstrom, D ;

Stano, A ;

Valenti, P ;

Vallone, M ;

Meliga, M .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 2006, 24 (01) :143-149

[5] The role of hole leakage in 1300-nm InGaAsN quantum-well lasers [J].

Tansu, N ;

Mawst, LJ .

APPLIED PHYSICS LETTERS, 2003, 82 (10) :1500-1502

[6] Very low threshold current density 1.3 μm GaInNAs single-quantum well lasers grown by molecular beam epitaxy [J].

Wang, SM ;

Wei, YQ ;

Wang, XD ;

Zhao, Q ;

Sadeghi, M ;

Larsson, A .

JOURNAL OF CRYSTAL GROWTH, 2005, 278 (1-4) :734-738

[7] High-frequency modulation and bandwidth limitations of GaInNAs double-quantum-well lasers -: art. no. 051103 [J].

Wei, YQ ;

Gustavsson, JS ;

Haglund, Å ;

Modh, P ;

Sadeghi, M ;

Wang, SM ;

Larsson, A .

APPLIED PHYSICS LETTERS, 2006, 88 (05) :1-3

[8] Uncooled 2.5 Gb/s operation of 1.3 μm GaInNAs DQW lasers over a wide temperature range [J].

Wei, YQ ;

Gustavsson, JS ;

Sadeghi, M ;

Wang, SM ;

Larsson, A .

OPTICS EXPRESS, 2006, 14 (07) :2753-2759

[9] High performance 1.28 μm GaLnNAs double quantum well lasers [J].

Wei, YQ ;

Sadeghi, M ;

Wang, SM ;

Modh, P ;

Larsson, A .

ELECTRONICS LETTERS, 2005, 41 (24) :1328-1330

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