Atomic-scale imaging and manipulation of ridges on epitaxial graphene on 6H-SiC(0001)

被引：85

作者：

Sun, G. F. ^{[1
,2
,3
]}

Jia, J. F. ^{[1
,4
]}

Xue, Q. K. ^{[1
,4
]}

Li, L. ^{[2
,3
]}

机构：

[1] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China

[2] Univ Wisconsin, Dept Phys, Milwaukee, WI 53211 USA

[3] Univ Wisconsin, Surface Studies Lab, Milwaukee, WI 53211 USA

[4] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China

来源：

NANOTECHNOLOGY | 2009年 / 20卷 / 35期

关键词：

D O I：

10.1088/0957-4484/20/35/355701

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Ridges are observed on epitaxial graphene on 6H-SiC(0001) by scanning tunneling microscopy (STM). Atomic resolution imaging reveals that they are in fact bulged regions of the graphene layer, occurring as a result of bending and buckling to relieve the compressive strain. Furthermore, their length, direction, and distribution can be manipulated, and new ones can even be created by the tip-surface interactions during STM imaging. The lower limit of terrace size for ridge formation is estimated to be similar to 80 nm, and nearly ridge-free graphene film can be obtained on vicinal 3.5 degrees miscut substrates.

引用

页数：4

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