GaInNAs/GaAs Bragg-mirror-based structures for novel 1.3 μm device applications

被引：25

作者：

Calvez, S

Hopkins, JM

Smith, SA

Clark, AH

Macaluso, R

Sun, HD

Dawson, MD

Jouhti, T

Pessa, M

Gundogdu, K

Hall, KC

Boggess, TF

机构：

[1] Univ Strathclyde, Inst Photon, Glasgow G4 0NW, Lanark, Scotland

[2] Tampere Univ Technol, Optoelect Res Ctr, FIN-33101 Tampere, Finland

[3] Univ Iowa, Dept Phys & Astron, Opt Sci & Technol Ctr, Iowa City, IA 52242 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2004年 / 268卷 / 3-4期

基金：

英国工程与自然科学研究理事会;

关键词：

dilute nitrides; semiconducting III-V materials; semiconducting quaternary alloys; solid state lasers; vertical-cavity devices; vertical-cavity surface emitting lasers;

D O I：

10.1016/j.jcrysgro.2004.04.072

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report the use of GaInNAs/GaAs material system for a range of 1.3 mum vertical-cavity devices namely VCSELs, VCSOAs, VECSELs and SESAMs. Using optical pumping, we demonstrate that up to 4 mW of 1290 nm output power can be fibre-coupled from a VCSEL. We also show that tayloring the VCSEL structure allows to produce a monolithic long-wavelength VCSOA with up to 16 dB of gain. We also report the first demonstration of a 1.3 mum VECSEL with more than 0.5W of CW ouptut power. Finally, annealing effects on the properties of a GaInNAs SBR and modelocking of two Nd:doped solid state lasers using this element are described. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：457 / 465

页数：9

共 33 条

[11] High-power passively mode-locked semiconductor lasers [J].