Key issues in fabricating microstructures with high aspect ratios by using deep X-ray lithography

被引:9
作者
Cheng, CM [1 ]
Chen, RH [1 ]
机构
[1] Natl Chiao Tung Univ, Dept Mech Engn, Hsinchu 30010, Taiwan
关键词
LIGA; DXRL; high aspect ratio; exposure and development; microstructure;
D O I
10.1016/j.mee.2004.02.004
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
High aspect ratio microstructures are frequently made with the Lithographie, Galvanoformung, Abformung (LIGA) process. The success of this process depends critically on "deep" X-ray lithography (DXRL). This paper presents a variety of experimentally and analytically determined techniques for optimizing DXRL. These include methods for designing and fabricating high-quality X-ray masks. Methods for optimizing the exposure dosage and developing cycle are described. New methods for promoting resist adhesion and for avoiding resist film cracking are discussed. The influence of developer surface tension on the resist solvation process is quantified and new methods for controlling this surface tension are described. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:335 / 342
页数:8
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