Study by X-ray photoelectron spectroscopy and X-ray diffraction of the growth of TiN thin films obtained by nitridation of Ti layers

Thin films of titanium nitride (TiN) were obtained by annealing Ti films in nitrogen atmosphere for different times. An accurate characterization of their chemical and crystalline nature was performed using X-ray photoelectron spectroscopy (XPS) depth profiling and X-ray diffraction (XRD) measurements. The XPS results show a deeper penetration of the nitrogen into the titanium layer as the forming time increases and a non-stoichiometric composition of the TiN layer when the nitridation time of the titanium him at 585 degrees C is below 100 min. The XRD data of these samples indicate the presence of a mixture of different crystalline phases.