REACTION OF TUNGSTEN HEXAFLUORIDE WITH SI AND TIN SURFACES

被引:3
作者
BOZACK, MJ
机构
[1] Solid State Sciences Laboratory, Department of Physics, Auburn University, Auburn
关键词
D O I
10.1016/0040-6090(92)90795-D
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The reaction of WF6 with Si and TiN surfaces has been investigated by Auger electron spectroscopy. On Si(100), the reaction of WF6 leads to a W thin film whose thickness increases exponentially with temperature and with an activation energy of 0.95 eV. The reaction is linear with WF6 exposure, resulting in a reaction rate of about 1 angstrom s-1 of deposited W at T = 500-degrees-C and 4 Pa WF6 pressure. On TiN, the reaction of WF6 at 4 Pa does not lead to W film growth at the temperatures 400-degrees-C < T < 500-degrees-C and exposure times 20 s < t < 400 s. Instead, the W intermixes throughout the TiN film in a non-activated process.
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页码:55 / 60
页数:6
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