Influence of annealing on carrier dynamics in As ion-implanted epitaxially lifted-off GaAs layers

被引：20

作者：

Marcinkevicius, S ^{[1
]}

Jagadish, C

Tan, HH

Kaminska, M

Korona, K

Adomavicius, R

Krotkus, A

机构：

[1] Royal Inst Technol, Dept Phys Opt, S-10044 Stockholm, Sweden

[2] Australian Natl Univ, Res Sch Phys Sci & Engn, Dept Elect Mat Engn, Canberra, ACT 0200, Australia

[3] Univ Warsaw, Inst Expt Phys, PL-00681 Warsaw, Poland

[4] Inst Semicond Phys, LT-2600 Vilnius, Lithuania

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 10期

关键词：

D O I：

10.1063/1.126017

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electrical and dynamical optical characterization of As-ion implanted and annealed GaAs has been performed. Changes of physical properties induced by annealing have been studied in detail by using layers annealed in small steps in the temperature range 500-700 degrees C. The carrier trapping rate increases exponentially with increase of inverse annealing temperature indicating that in ion-implanted GaAs ultrafast carrier capture occurs to the same trapping centers as in low-temperature-grown GaAs. Relatively large resistivity and electron mobility in As-implanted GaAs have been observed after annealing, which shows that this material possesses properties required for a variety of ultrafast optoelectronic applications. (C) 2000 American Institute of Physics. [S0003-6951(00)02410-4].

引用

页码：1306 / 1308

页数：3

共 11 条

[1]

BLISS DE, 1993, J ELECTRON MATER, V22, P1401, DOI 10.1007/BF02649985

[2] ANNEALING DYNAMICS OF ARSENIC-RICH GAAS FORMED BY ION-IMPLANTATION [J].

FUJIOKA, H ;

KRUEGER, J ;

PRASAD, A ;

LIU, X ;

WEBER, ER ;

VERMA, AK .

JOURNAL OF APPLIED PHYSICS, 1995, 78 (03) :1470-1475

[3] SUBPICOSECOND CARRIER LIFETIMES IN ARSENIC-ION-IMPLANTED GAAS [J].

GANIKHANOV, F ;

LIN, GR ;

CHEN, WC ;

CHANG, CS ;

PAN, CL .

APPLIED PHYSICS LETTERS, 1995, 67 (23) :3465-3467

[4] SUBPICOSECOND CARRIER LIFETIME IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURES [J].

GUPTA, S ;

FRANKEL, MY ;

VALDMANIS, JA ;

WHITAKER, JF ;

MOUROU, GA ;

SMITH, FW ;

CALAWA, AR .

APPLIED PHYSICS LETTERS, 1991, 59 (25) :3276-3278

[5] Ultrafast carrier trapping in high energy ion implanted gallium arsenide [J].

Jagadish, C ;

Tan, HH ;

Krotkus, A ;

Marcinkevicius, S ;

Korona, KP ;

Kaminska, M .

APPLIED PHYSICS LETTERS, 1996, 68 (16) :2225-2227

[6] HIGH-RESISTIVITY AND PICOSECOND CARRIER LIFETIME OF GAAS IMPLANTED WITH MEV GA IONS AT HIGH FLUENCES [J].

JAGADISH, C ;

TAN, HH ;

JASINSKI, J ;

KAMINSKA, M ;

PALCZEWSKA, M ;

KROTKUS, A ;

MARCINKEVICIUS, S .

APPLIED PHYSICS LETTERS, 1995, 67 (12) :1724-1726

[7] PICOSECOND CARRIER LIFETIME IN GAAS IMPLANTED WITH HIGH-DOSES OF AS IONS - AN ALTERNATIVE MATERIAL TO LOW-TEMPERATURE GAAS FOR OPTOELECTRONIC APPLICATIONS [J].

KROTKUS, A ;

MARCINKEVICIUS, S ;

JASINSKI, J ;

KAMINSKA, M ;

TAN, HH ;

JAGADISH, C .

APPLIED PHYSICS LETTERS, 1995, 66 (24) :3304-3306

[8] Material and ultrafast optoelectronic properties of furnace-annealed arsenic-ion-implanted GaAs [J].

Lin, GR ;

Chen, WC ;

Chang, CS ;

Chao, SC ;

Wu, KH ;

Hsu, TM ;

Lee, WC ;

Pan, CL .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1998, 34 (09) :1740-1748

[9] MECHANISM RESPONSIBLE FOR THE SEMIINSULATING PROPERTIES OF LOW-TEMPERATURE-GROWN GAAS [J].

LIU, X ;

PRASAD, A ;

CHEN, WM ;

KURPIEWSKI, A ;

STOSCHEK, A ;

LILIENTALWEBER, Z ;

WEBER, ER .

APPLIED PHYSICS LETTERS, 1994, 65 (23) :3002-3004

[10]

Marcinkevicius S, 1996, APPL PHYS LETT, V68, P397, DOI 10.1063/1.116697

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