Metal nanocrystal memories - Part II: Electrical characteristics

被引：140

作者：

Liu, ZT ^{[1
]}

Lee, C ^{[1
]}

Narayanan, V ^{[1
]}

Pei, G ^{[1
]}

Kan, EC ^{[1
]}

机构：

[1] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2002年 / 49卷 / 09期

关键词：

memories; metals; MOSFETS; work function;

D O I：

10.1109/TED.2002.802618

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes the electrical characteristics of the metal nanocrystal memory devices continued from the previous paper [1]. Devices with An, Ag, and Pt nanocrystals working in the F-N tunneling regime have been investigated and compared with Si nanocrystal memory devices. With hot-carrier injection such as the programming mechanism, retention time up to 10(6) s has been observed and 2-bit-per-cell storage capability has been demonstrated and analyzed. The concern of the possible metal contamination is also addressed by current-voltage (I-V) and capacitance-voltage (C-V) characterizations. The extracted inversion layer mobility and minority carrier lifetime suggest that the substrate is free from metal contamination with continuous operations.

引用

页码：1614 / 1622

页数：9

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