Templated fabrication of nanowire and nanoring arrays based on interference lithography and electrochemical deposition

被引：61

作者：

Ji, Ran ^{[1
]}

Lee, Woo ^{[1
]}

Scholz, Roland ^{[1
]}

Goesele, Ulrich ^{[1
]}

Nielsch, Kornelius ^{[1
]}

机构：

[1] Max Planck Inst Microstruct Phys, D-06120 Halle, Germany

来源：

ADVANCED MATERIALS | 2006年 / 18卷 / 19期

关键词：

D O I：

10.1002/adma.200601136

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Periodic photoresist patterns have been fabricated by laser interference lithography over a wafer-scale area. The structures are used as an etching mask for the subsequent reactive-ion etching of the underlying Si3N4 layer and etched about 9 nm into the highly doped Si substrate. Au nanowire or nanoring arrays have been prepared by selective electrochemical deposition on the step edges of the Si3N4 structures (see figure and cover).

引用

页码：2593 / +

页数：5

共 33 条

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