Lithium ion irradiation effects on epitaxial silicon detectors

被引：13

作者：

Candelori, A ^{[1
]}

Schramm, A

Bisello, D

Contarato, D

Fretwurst, E

Lindström, G

Rando, R

Wyss, J

机构：

[1] Univ Padua, Ist Nazl Fis Nucl, I-35131 Padua, Italy

[2] Univ Padua, Dipartimento Fis, I-35131 Padua, Italy

[3] Univ Hamburg, Inst Expt Phys, D-22761 Hamburg, Germany

[4] Univ Cassino, DIMSAT, I-03043 Cassino, Italy

[5] Ist Nazl Fis Nucl, I-56100 Pisa, Italy

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2004年 / 51卷 / 04期

关键词：

diodes; epitaxial layers; ion irradiation effects; radiation detectors;

D O I：

10.1109/TNS.2004.832702

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Diodes manufactured on a thin and highly doped epitaxial silicon layer grown on a Czochralski silicon substrate have been irradiated by high energy lithium ions in order to investigate the effects of high bulk damage levels. This information is useful for possible developments of pixel detectors in future very high lumiosity colliders because these new devices present superior radiation hardness than nowadays silicon detectors. The reverse current increase, the variation of the depletion voltage, and their annealing characteristics, as well as the charge collection properties, are presented and discussed.

引用

页码：1766 / 1772

页数：7

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