MOSFET dosimetry of an X-ray microbeam.

被引：37

作者：

Rosenfeld, AB ^{[1
]}

Kaplan, GI

Kron, T

Allen, BJ

Dilmanian, A

Orion, I

Ren, B

Lerch, MLF

Holmes-Siedle, A

机构：

[1] Univ Wollongong, Radiat Phys Grp, Wollongong, NSW 2522, Australia

[2] Univ Newcastle, Dept Phys, Newcastle, NSW 2310, Australia

[3] Brookhaven Natl Lab, Upton, NY 11973 USA

[4] RFM Oxford Ltd, Oxford OX8 1PD, England

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1999年 / 46卷 / 06期

关键词：

D O I：

10.1109/23.819153

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A metal-oxide-semiconductor field effect transistor (MOSFET) has been used as a radiation monitor to map the profile of a variety of X-ray radiation microbeams. The present work studies the role of the topology of the MOSFET gate oxide when mapping radiation microbeams. The "edge-on" MOSFET has been introduced for microbeam mapping and the spatial resolution of the "edge-on" MOSFET is investigated. Comparison is made with other mapping techniques including, Gafchromic(TM) film, radiographic film, ionization chamber. The results clearly demonstrate the superiority of the "edge-on" MOSFET when applied to mapping of narrow radiation beams. The spatial resolution of the "edge-on" MOSFET is estimated to be 1 mu m and appears to be limited by the width of the gate oxide thickness.

引用

页码：1774 / 1780

页数：7

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