Thin-film transistors with polycrystalline silicon films prepared by two-step rapid thermal annealing

被引：18

作者：

Cheng, HC

Huang, CY

Wang, FS

Lin, KH

Tarntair, FG

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Inst Elect, Semicond Res Ctr, Hsinchu 300, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2000年 / 39卷 / 1AB期

关键词：

SPC; RTA; CFA; poly-Si TFTs; two-step RTA;

D O I：

10.1143/JJAP.39.L19

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A novel two-step rapid thermal annealing (RTA) process has been developed to significantly reduce the crystallization time for the solid-phase crystallization (SPC) of amorphous silicon films. In comparison with the conventional SPC processes, it not only keeps a low thermal budget but also achieves a larger poly-Si film grain size than that obtained by one-step RTA, and even as large as that obtained by conventional furnace annealing (CFA). Furthermore, poly-Si thin-film transistors fabricated by such a novel annealing scheme possess electrical characteristics superior to those obtained by one-step RTA and comparable to those obtained by long-time CFA.

引用

收藏

页码：L19 / L21

页数：3

相关论文

共 16 条

[1] CRYSTALLIZATION OF LPCVD SILICON FILMS BY LOW-TEMPERATURE ANNEALING [J].

AOYAMA, T ;

KAWACHI, G ;

KONISHI, N ;

SUZUKI, T ;

OKAJIMA, Y ;

MIYATA, K .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (04) :1169-1173

[2] POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS WITH 2-STEP ANNEALING PROCESS [J].

BONNEL, M ;

DUHAMEL, N ;

HAJI, L ;

LOISEL, B ;

STOEMENOS, J .

IEEE ELECTRON DEVICE LETTERS, 1993, 14 (12) :551-553

[3] FURNACE AND RAPID THERMAL ANNEALING FOR POLYSILICON THIN-FILM TRANSISTORS - INFLUENCE OF CHANNEL FILM THICKNESS [J].

BONNEL, M ;

DUHAMEL, N ;

HENRION, T ;

LOISEL, B ;

HAJI, T .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1993, 140 (12) :3584-3587

[4] POLY-SI THIN-FILM TRANSISTORS FABRICATED WITH RAPID THERMAL ANNEALED SILICON FILMS [J].

BONNEL, M ;

DUHAMEL, N ;

GUENDOUZ, M ;

HAJI, L ;

LOISEL, B ;

RUAULT, P .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (11B) :L1924-L1926

[5]

HAJJ L, 1994, J APPL PHYS, V75, P3944

[6] HIGH-PERFORMANCE THIN-FILM TRANSISTORS IN LOW-TEMPERATURE CRYSTALLIZED LPCVD AMORPHOUS-SILICON FILMS [J].

HATALIS, MK ;

GREVE, DW .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (08) :361-364

[7] RECRYSTALLIZATION OF AMORPHIZED POLYCRYSTALLINE SILICON FILMS ON SIO2 - TEMPERATURE-DEPENDENCE OF THE CRYSTALLIZATION PARAMETERS [J].

IVERSON, RB ;

REIF, R .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (05) :1675-1681

[8] CRYSTALLIZED SI FILMS BY LOW-TEMPERATURE RAPID THERMAL ANNEALING OF AMORPHOUS-SILICON [J].

KAKKAD, R ;

SMITH, J ;

LAU, WS ;

FONASH, SJ ;

KERNS, R .

JOURNAL OF APPLIED PHYSICS, 1989, 65 (05) :2069-2072

[9]

KINUGAWA M, 1990, VLSI S, P23

[10] CONDUCTIVITY BEHAVIOR IN POLYCRYSTALLINE SEMICONDUCTOR THIN-FILM TRANSISTORS [J].

LEVINSON, J ;

SHEPHERD, FR ;

SCANLON, PJ ;

WESTWOOD, WD ;

ESTE, G ;

RIDER, M .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) :1193-1202