Silicon nanowires fabricated by thermal evaporation of silicon monoxide

被引：40

作者：

Niu, JJ

Sha, J

Yang, DR ^{[1
]}

机构：

[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

[2] Zhejiang Univ, Dept Phys, Hangzhou 310027, Peoples R China

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2004年 / 23卷 / 1-2期

基金：

中国国家自然科学基金;

关键词：

nanowires; silicon; thermal evaporation;

D O I：

10.1016/j.physe.2004.01.013

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A large-scale crystalline silicon nanowires (SiNWs) with a diameter of similar to30 nm and length of tens of micrometers on Al2O3 templates and silicon wafers were synthesized by the thermal evaporation of silicon monoxide (SiO). The SiNWs were measured by transmission electron microscopy, scanning electron microscopy, X-ray diffraction and Raman spectroscopy, respectively. It was pointed out that the SiNWs possessed the well crystalline structure. Therefore, it is considered that SiO could be used as Si sources to produce larger-scale SiNWs and crystalline SiNWs may grow from amorphous nuclei. (C) 2004 Elsevier B.V. All rights reserved.

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页码：131 / 134

页数：4

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