Growth and properties of (Ga, Mn) As: A new III-V diluted magnetic semiconductor

被引：26

作者：

Matsukura, F ^{[1
]}

Oiwa, A ^{[1
]}

Shen, A ^{[1
]}

Sugawara, Y ^{[1
]}

Akiba, N ^{[1
]}

Kuroiwa, T ^{[1
]}

Ohno, H ^{[1
]}

Endo, A ^{[1
]}

Katsumoto, S ^{[1
]}

Iye, Y ^{[1
]}

机构：

[1] UNIV TOKYO, INST SOLID STATE PHYS, TOKYO 106, JAPAN

来源：

APPLIED SURFACE SCIENCE | 1997年 / 113卷

基金：

日本学术振兴会;

关键词：

molecular-beam epitaxy; III-V compounds; diluted magnetic semiconductors; ferromagnetic order; magnetic anisotropy; anomalous Hall effect;

D O I：

10.1016/S0169-4332(96)00790-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A new III-V diluted magnetic semiconductor, (Ga, Mn)As, was prepared by low-temperature molecular beam epitaxy. The lattice constant oi (Ga, Mn)As films determined by X-ray diffraction showed a linear increase with increase of Mn composition, suggesting homogeneous incorporation of Mn in the film. Magnetization measurements revealed ferromagnetic order al low temperature, while magnetotransport measurements showed the anomalous Hall effect and negative magnetoresistance associated with the ferromagnetic order in the (Ga, Mn)As films.

引用

页码：178 / 182

页数：5

共 14 条

[1] ELECTRICAL-PROPERTIES OF GALLIUM MANGANESE ANTIMONIDE - A NEW DILUTED MAGNETIC SEMICONDUCTOR [J].