Transmission electron microscopy observation of CoSix spikes in Si substrates during co-silicidation process

被引：21

作者：

Sukegawa, T ^{[1
]}

Tomita, H ^{[1
]}

Fushida, A ^{[1
]}

Goto, K ^{[1
]}

Komiya, S ^{[1
]}

Nakamura, T ^{[1
]}

机构：

[1] FUJITSU LABS LTD,ATSUGI,KANAGAWA 24301,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1997年 / 36卷 / 10期

关键词：

transmission electron microscopy (TEM); Co silicide; spike; interface reaction; phase transformation; junction leakage;

D O I：

10.1143/JJAP.36.6244

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Needle-like spikes penetrating into Si substrates have been detected by cross-sectional transmission electron microscopy (TEM) studies of Co silicide/Si interfaces, The spikes are crystalline CoSix and form at annealing temperatures of 400-425 degrees C, when the transformations of Co --> Co2Si and Co2Si --> CoSi are both taking place. They sometimes extend to the p/n junction depth of 100 nm. During annealing at above 500 degrees C, they become spherical and their density decreases. The temperature range in which CoSix spikes are formed and extend to near the junction depth corresponds well with that for the onset of junction leakage. Therefore, this supports the conclusion that Co silicide junction leakage is caused by such spike formation.

引用

页码：6244 / 6249

页数：6

共 15 条

[1] A SILICIDATION-INDUCED PROCESS CONSIDERATION FOR FORMING SCALE-DOWN SILICIDED JUNCTION [J].