Current status and advances in the growth of SiC

被引：51

作者：

Yakimova, R ^{[1
]}

Janzén, E ^{[1
]}

机构：

[1] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden

来源：

关键词：

crystal growth; micropipes; silicon carbide (SiC); sublimation; CVD growth;

D O I：

10.1016/S0925-9635(99)00219-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Recent achievements in crystal growth and homoepitaxy of SiC, mainly of the 4H polytype, have been discussed. Several growth techniques, such as seeded sublimation growth, high temperature chemical vapor deposition, sublimation epitaxy and liquid phase epitaxy have been utilized to develop technological procedures and understand the growth processes better. The advantages of either method have been stressed. The main target has been the reproducible growth of micropipe free substrate material and thick epitaxial layers for device applications. The purity of the layers has been of special interest. The results obtained are indicative for the massive progress that has been achieved in SiC crystal growth during recent years. (C) 2000 Elsevier Science S.A. Al rights reserved.

引用

页码：432 / 438

页数：7

共 15 条

[1]

CARTER CH, 1999, MRS SPRING M 1999 5, P308

[2] SiC fabrication technology: Growth and doping [J].

Dmitriev, VA ;

Spencer, MG .

SIC MATERIALS AND DEVICES, 1998, 52 :21-75

[3] Micropipes in silicon carbide: Microstructure of the wall [J].

Heindl, J ;

Strunk, HP .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1996, 193 (01) :K1-K3

[4] CONTROLLED SUBLIMATION GROWTH OF SINGLE CRYSTALLINE 4H-SIC AND 6H-SIC AND IDENTIFICATION OF POLYTYPES BY X-RAY-DIFFRACTION [J].

KANAYA, M ;

TAKAHASHI, J ;

FUJIWARA, Y ;

MORITANI, A .

APPLIED PHYSICS LETTERS, 1991, 58 (01) :56-58

[5] High temperature chemical vapor deposition of SiC [J].

Kordina, O ;

Hallin, C ;

Ellison, A ;

Bakin, AS ;

Ivanov, IG ;

Henry, A ;

Yakimova, R ;

Touminen, M ;

Vehanen, A ;

Janzen, E .

APPLIED PHYSICS LETTERS, 1996, 69 (10) :1456-1458

[6] Growth of thick epitaxial 4H-SiC layers by chemical vapor deposition [J].

Kordina, O ;

Irvine, K ;

Sumakeris, J ;

Kong, HS ;

Paisley, MJ ;

Carter, CH .

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 :107-110

[7]

RABACK P, 1999, R0199 CSC

[8] CONTROL OF POLYTYPE FORMATION BY SURFACE-ENERGY EFFECTS DURING THE GROWTH OF SIC MONOCRYSTALS BY THE SUBLIMATION METHOD [J].

STEIN, RA ;

LANIG, P .

JOURNAL OF CRYSTAL GROWTH, 1993, 131 (1-2) :71-74

[9] Morphology and polytype disturbances in sublimation growth of SiC epitaxial layers [J].

Syväjärvi, M ;

Yakimova, R ;

Glans, PA ;

Henry, A ;

MacMillan, MF ;

Johansson, LI ;

Janzén, E .

JOURNAL OF CRYSTAL GROWTH, 1999, 198 :1019-1023

[10] Growth of 6H and 4H-SiC by sublimation epitaxy [J].

Syväjärvi, M ;

Yakimova, R ;

Tuominen, M ;

Kakanakova-Georgieva, A ;

MacMillan, MF ;

Henry, A ;

Wahab, Q ;

Janzén, E .

JOURNAL OF CRYSTAL GROWTH, 1999, 197 (1-2) :155-162

← 1 2 →