Anisotropic-etching simulation of InP and Si

被引：7

作者：

Chahoud, M ^{[1
]}

Wehmann, HH ^{[1
]}

Schlachetzki, A ^{[1
]}

机构：

[1] TECH UNIV CAROLO WILHELMINA BRAUNSCHWEIG,INST HALBLEITERTECH,D-38023 BRAUNSCHWEIG,GERMANY

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1997年 / 63卷 / 02期

关键词：

etching simulation; anisotropic etching; indium phosphide; silicon;

D O I：

10.1016/S0924-4247(97)01535-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new etching simulator is presented which takes advantage of cellular and geometrically based models. The crystalline solid is represented by cubic primitive cells so that the model can easily be applied to diamond and zincblende lattices. Anisotropic etching behaviour is accounted for by experimentally determined etching rates of only a few distinct crystallographic planes. Thus, even geometrically complex structures can be simulated without extended experimental or calculational effort. The versatility of the simulator is demonstrated for InP in HBr and Si in KOH-isopropanol, resulting in good agreement between simulation and experiment. (C) 1997 Elsevier Science S.A.

引用

页码：141 / 146

页数：6

共 15 条

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