Mn enriched surface of annealed (GaMn)As layers annealed under arsenic capping

被引：11

作者：

Adell, M. ^{[1
]}

Adell, J.

Ilver, L.

Kanski, J.

Sadowski, J.

Domagala, J. Z.

机构：

[1] Chalmers, Dept Appl Phys, SE-41296 Gothenburg, Sweden

[2] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

来源：

PHYSICAL REVIEW B | 2007年 / 75卷 / 05期

关键词：

D O I：

10.1103/PhysRevB.75.054415

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Using synchrotron radiation based spectroscopic methods we have investigated the surface modifications of Ga1-xMnxAs layers due to post growth annealing under amorphous arsenic capping layers. It is established that there is a clear increase of the Mn concentration at the surface after annealing. This is ascribed to a reaction between diffusing Mn interstitials and the As capping. The reacted surface is smooth and well ordered with a 1x2 reconstruction. All data indicate that the annealed (GaMn)As is terminated by a monolayer MnAs in zinc-blende structure.

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页数：6

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共 23 条

[1] Postgrowth annealing of (Ga,Mn) As under As capping:: An alternative way to increase TC -: art. no. 112501 [J].

Adell, M ;

Ilver, L ;

Kanski, J ;

Stanciu, V ;

Svedlindh, P ;

Sadowski, J ;

Domagala, JZ ;

Terki, F ;

Hernandez, C ;

Charar, S .

APPLIED PHYSICS LETTERS, 2005, 86 (11) :1-3

[2] Photoemission studies of the annealing-induced modifications of Ga0.95Mn0.05As -: art. no. 125204 [J].

Adell, M ;

Ilver, L ;

Kanski, J ;

Sadowski, J ;

Mathieu, R ;

Stanciu, V .

PHYSICAL REVIEW B, 2004, 70 (12) :125204-1

[3] Photoemission studies of Ga1-xMnxAs:: Mn concentration dependent properties -: art. no. 115319 [J].

Åsklund, H ;

Ilver, L ;

Kanski, J ;

Sadowski, J ;

Mathieu, R .

PHYSICAL REVIEW B, 2002, 66 (11) :1153191-1153195

[4] The growth of GaMnAs films by molecular beam epitaxy using arsenic dimers [J].

Campion, RP ;

Edmonds, KW ;

Zhao, LX ;

Wang, KY ;

Foxon, CT ;

Gallagher, BL ;

Staddon, CR .

JOURNAL OF CRYSTAL GROWTH, 2003, 251 (1-4) :311-316

[5] Effect of low-temperature annealing on (Ga,Mn)As trilayer structures [J].

Chiba, D ;

Takamura, K ;

Matsukura, F ;

Ohno, H .

APPLIED PHYSICS LETTERS, 2003, 82 (18) :3020-3022

[6] Mn interstitial diffusion in (Ga,Mn)As [J].

Edmonds, KW ;

Boguslawski, P ;

Wang, KY ;

Campion, RP ;

Novikov, SN ;

Farley, NRS ;

Gallagher, BL ;

Foxon, CT ;

Sawicki, M ;

Dietl, T ;

Nardelli, MB ;

Bernholc, J .

PHYSICAL REVIEW LETTERS, 2004, 92 (03) :4

[7] Carrier induced ferromagnetic interactions and transport properties of p-Zn(1-x)MnxTe epilayers [J].

Ferrand, D ;

Cibert, J ;

Wasiela, A ;

Bourgognon, C ;

Tatarenko, S ;

Fishman, G ;

Kolesnik, S ;

Jaroszynski, J ;

Dietl, T ;

Barbara, B ;

Dufeu, D .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (09) :6451-6453

[8] Independent electronic and magnetic doping in (Ga,Mn)As based digital ferromagnetic heterostructures [J].

Johnston-Halperin, E ;

Schuller, JA ;

Gallinat, CS ;

Kreutz, TC ;

Myers, RC ;

Kawakami, RK ;

Knotz, H ;

Gossard, AC ;

Awschalom, DD .

PHYSICAL REVIEW B, 2003, 68 (16)

[9] Annealing-dependent magnetic depth profile in Ga1-xMnxAs -: art. no. 081307 [J].

Kirby, BJ ;

Borchers, JA ;

Rhyne, JJ ;

Velthuis, SGET ;

Hoffmann, A ;

O'Donovan, KV ;

Wojtowicz, T ;

Liu, X ;

Lim, WL ;

Furdyna, JK .

PHYSICAL REVIEW B, 2004, 69 (08)

[10] Highly enhanced Curie temperature in low-temperature annealed [Ga,Mn]As epilayers [J].

Ku, KC ;

Potashnik, SJ ;

Wang, RF ;

Chun, SH ;

Schiffer, P ;

Samarth, N ;

Seong, MJ ;

Mascarenhas, A ;

Johnston-Halperin, E ;

Myers, RC ;

Gossard, AC ;

Awschalom, DD .

APPLIED PHYSICS LETTERS, 2003, 82 (14) :2302-2304