In situ monitoring of MOVPE growth by combined spectroscopic ellipsometry and reflectance-difference spectroscopy

被引：13

作者：

Ebert, M ^{[1
]}

Bell, KA ^{[1
]}

Yoo, SD ^{[1
]}

Flock, K ^{[1
]}

Aspnes, DE ^{[1
]}

机构：

[1] N Carolina State Univ, Raleigh, NC 27695 USA

来源：

THIN SOLID FILMS | 2000年 / 364卷 / 1-2期

关键词：

real-time monitoring; metalorganic vapor phase epitaxy; growth control; spectroscopic ellipsometry; reflectance-difference spectroscopy; silicon (Si); gallium phosphide (GaP);

D O I：

10.1016/S0040-6090(99)00920-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Comprehensive characterization of epitaxial growth by metal organic vapor phase epitaxy (MOVPE) requires a combination of thin-film, near-surface-, and surface-sensitive techniques to determine layer thicknesses and compositions, composition of the most recently deposited material, and surface chemistry, respectively. These data can be obtained non-destructively by spectroscopic ellipsometry (SE) and reflectance-difference (-anisotropy) spectroscopy (RDS/RAS). Here we describe the first unified optical system, basically a rotating-polarizer ellipsometer (RPE) integrated into a modified commercial rotating-sample MOVPE reactor, that performs both SE and RDS simultaneously with a single optical path. Data are obtained in parallel from 240 to 840 nm with a high-speed 16-bit photodiode array (PDA) at a repetition rate greater than 2 Hz and a precision of +/-0.0001. We provide examples of its use, and show in particular that Cap intermixes with Si during the initial stages of heteroepitaxy. Capabilities of the presented configuration and its potential for future investigations are discussed. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：22 / 27

页数：6

共 22 条

[11] Real-time optical characterization of GaP heterostructures by p-polarized reflectance [J].