GaN-Based LEDs With AZO:Y Upper Contact

被引：20

作者：

Chen, P. H. ^{[1
]}

Lai, W. C. ^{[1
]}

Peng, Li-Chi ^{[1
]}

Kuo, C. H. ^{[2
]}

Yeh, Chi-Li ^{[2
]}

Sheu, J. K. ^{[1
]}

Tun, C. J. ^{[3
]}

机构：

[1] Natl Cheng Kung Univ, Inst Electroopt Sci & Engn, Tainan 70101, Taiwan

[2] Natl Cent Univ, Dept Opt & Photon, Jhongli 32001, Taiwan

[3] Natl Synchrotron Radiat Res Ctr, Hsinchu 30076, Taiwan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2010年 / 57卷 / 01期

关键词：

AZO; AZO:Y; e-beam; light-emitting diode (LED); LIGHT-EMITTING-DIODES; P-TYPE GAN; NITRIDE-BASED LEDS; DOPED ZNO; OHMIC CONTACTS; LOW-RESISTANCE; TRANSPARENT; POWER; FILMS; OUTPUT;

D O I：

10.1109/TED.2009.2033647

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the fabrication of GaN-based light-emitting diodes (LEDs) with ytterbium-doped alumina-zinc-oxide (AZO:Y) upper contact. It was found that AZO and AZO:Y are both highly transparent in the visible region with good thermal stability optically. However, it was found that AZO:Y is much more thermally stable electrically, as compared with AZO. Furthermore, it was found that the output power of GaN LEDs with AZO upper contact decreased significantly from 2.80 to 2.30 mW after 700 degrees C annealing. With the same annealing condition, it was found that output power decreased only slightly from 2.77 to 2.69 mW for the LEDs with AZO:Y upper contact.

引用

页码：134 / 139

页数：6

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