High-performing submicron organic thin-film transistors fabricated by residue-free embossing

被引：30

作者：

Auner, Christoph ^{[1
]}

Palfinger, Ursula ^{[1
]}

Gold, Herbert ^{[1
]}

Kraxner, Johanna ^{[1
]}

Haase, Anja ^{[1
]}

Haber, Thomas ^{[2
]}

Sezen, Meltem ^{[2
]}

Grogger, Werner ^{[2
]}

Jakopic, Georg ^{[1
]}

Krenn, Joachim R. ^{[1
]}

Leising, G. ^{[3
]}

Stadlober, Barbara ^{[1
]}

机构：

[1] Joanneum Res GmbH, Inst Nanostructured Mat & Photon, A-8160 Weiz, Austria

[2] Graz Univ Technol, Inst Electron Microscopy, A-8010 Graz, Austria

[3] Graz Univ Technol, Inst Solid State Phys, A-8010 Graz, Austria

来源：

ORGANIC ELECTRONICS | 2010年 / 11卷 / 04期

关键词：

Organic thin-film transistors; Nanoimprint lithography; Hot Embossing; Submicron channel length; FIELD-EFFECT TRANSISTORS; NM CHANNEL-LENGTH; ROLL-TO-ROLL; NANOIMPRINT LITHOGRAPHY; LOW-VOLTAGE;

D O I：

10.1016/j.orgel.2009.12.012

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this study, we report on an innovative residue-free nanoimprint lithography process for the patterning of submicron-spaced contacts, used as source and drain electrodes in down-scaled organic thin-film transistors. The method is based on thermally initiated radical polymerization of a novel imprint resist whose outstanding chemical and physical properties are responsible for the excellent results in processability and structure transfer. In combination with a pretreated stamp the thermally curable resist enables residue-free imprinting, thus making etching obsolete. In addition, this process implies only moderate temperature budgets and it is eco-friendly due to a water-based lift-off. To validate the process, source and drain patterned submicron organic thin-film transistors with pentacene as the semiconductor were fabricated, which show excellent transistor behavior parameterized by a low switch-on voltage of V-so = -3 V, an on-off ratio of more than 10(5) and a charge carrier mobility of mu = 0.25 cm(2)/V s. (C) 2009 Elsevier B. V. All rights reserved.

引用

页码：552 / 557

页数：6

共 21 条

[1] High-speed roll-to-roll nanoimprint lithography on flexible plastic substrates [J].

Ahn, Se Hyun ;

Guo, L. Jay .

ADVANCED MATERIALS, 2008, 20 (11) :2044-+

[2] Large-Area Roll-to-Roll and Roll-to-Plate Nanoimprint Lithography: A Step toward High-Throughput Application of Continuous Nanoimprinting [J].

Ahn, Se Hyun ;

Guo, L. Jay .

ACS NANO, 2009, 3 (08) :2304-2310

[3] Residue-free room temperature UV-nanoimprinting of submicron organic thin film transistors [J].

Auner, C. ;

Palfinger, U. ;

Gold, H. ;

Kraxner, J. ;

Haase, A. ;

Haber, T. ;

Sezen, M. ;

Grogger, W. ;

Jakopic, G. ;

Krenn, J. R. ;

Leising, G. ;

Stadlober, B. .

ORGANIC ELECTRONICS, 2009, 10 (08) :1466-1472

[4] Fabrication of 70 nm channel length polymer organic thin-film transistors using nanoimprint lithography [J].

Austin, MD ;

Chou, SY .

APPLIED PHYSICS LETTERS, 2002, 81 (23) :4431-4433

[5] A hybrid mask-mould lithography scheme and its application in nanoscale organic thin film transistors [J].

Cheng, X ;

Li, DW ;

Guo, LJ .

NANOTECHNOLOGY, 2006, 17 (04) :927-932

[6] Low-voltage, 30 nm channel length, organic transistors with a self-assembled monolayer as gate insulating films [J].

Collet, J ;

Tharaud, O ;

Chapoton, A ;

Vuillaume, D .

APPLIED PHYSICS LETTERS, 2000, 76 (14) :1941-1943

[7] Influence of grain sizes on the mobility of organic thin-film transistors [J].

Di Carlo, A ;

Piacenza, F ;

Bolognesi, A ;

Stadlober, B ;

Maresch, H .

APPLIED PHYSICS LETTERS, 2005, 86 (26) :1-3

[8]

Giannuzzi L.A., 2004, INTRO FOCUSED ION BE

[9] Nanoimprinted organic field-effect transistors:: fabrication, transfer mechanism and solvent effects on device characteristics [J].

Kam, AP ;

Seekamp, J ;

Solovyev, V ;

Cedeño, CC ;

Goldschmidt, A ;

Torres, CMS .

MICROELECTRONIC ENGINEERING, 2004, 73-4 :809-813

[10] 10-nm channel length pentacene transistors [J].

Lee, JB ;

Chang, PC ;

Liddle, JA ;

Subramanian, V .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005, 52 (08) :1874-1879

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