Role of the host matrix in the carrier recombination of InGaAsN alloys

被引：15

作者：

Vinattieri, A

Alderighi, D

Zamfirescu, M

Colocci, M

Polimeni, A

Capizzi, M

Gollub, D

Fischer, M

Forchel, A

机构：

[1] Univ Florence, INFM, Dipartimento Fis, I-50019 Sesto Fiorentino, Italy

[2] Univ Florence, LENS, I-50019 Sesto Fiorentino, Italy

[3] Univ Roma La Sapienza, Dipartimento Fis, INFM, I-00185 Rome, Italy

[4] Univ Wurzburg, D-97074 Wurzburg, Germany

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 17期

关键词：

D O I：

10.1063/1.1569983

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present an experimental study of the carrier recombination dynamics in high-quality (InGa)(AsN)/GaAs and Ga(AsN)/GaAs quantum-well structures after picosecond excitation. A comparison among samples with and without nitrogen and with different In concentration shows that nonradiative channels originated in the host matrix [i.e., (InGa)As and GaAs] play a dominant role in the recombination dynamics of these heterostructures. (C) 2003 American Institute of Physics.

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页码：2805 / 2807

页数：3

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