Indium oxide thin-film holographic recorders grown by excimer laser reactive sputtering

被引:25
作者
Grivas, C [1 ]
Gill, DS [1 ]
Mailis, S [1 ]
Boutsikaris, L [1 ]
Vainos, NA [1 ]
机构
[1] Fdn Res & Technol Hellas, Inst Elect Struct & Laser, Laser & Applicat Div, Heraklion 71110, Crete, Greece
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1998年 / 66卷 / 02期
关键词
D O I
10.1007/s003390050656
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Growth of indium oxide (In2O3) thin films on glass substrates is performed by pulsed laser ablation of a metallic indium target in an oxygen atmosphere. X-ray diffraction analysis verifies that a transition, from amorphous to polycrystalline film growth, occurs at a temperature of 150 degrees C. Films grown under optimized conditions exhibit optical transmission higher than 80% in the visible light. Ultraviolet radiation (lambda = 325 nm) induced dynamic holographic recording in films deposited at specific temperature and oxygen pressure settings is also demonstrated.
引用
收藏
页码:201 / 204
页数:4
相关论文
共 16 条
[1]   DIELECTRIC BEHAVIOR OF AMORPHOUS INDIUM OXIDE THIN-FILMS [J].
BALASUBRAMANIAN, A ;
RADHAKRISHNAN, M ;
BALASUBRAMANIAN, C .
THIN SOLID FILMS, 1990, 193 (1-2) :981-989
[2]   ELECTRICAL AND OPTICAL-PROPERTIES OF AMORPHOUS INDIUM OXIDE [J].
BELLINGHAM, JR ;
PHILLIPS, WA ;
ADKINS, CJ .
JOURNAL OF PHYSICS-CONDENSED MATTER, 1990, 2 (28) :6207-6221
[3]   TRANSPARENT CONDUCTIVE ELECTRODES FOR ELECTROCHROMIC DEVICES - A REVIEW [J].
GRANQVIST, CG .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1993, 57 (01) :19-24
[4]   Characterization of low-resistivity indium oxide films by Auger electron spectroscopy, x-ray photoelectron spectroscopy, and x-ray diffraction and correlation between their properties, composition, and texture [J].
Jeong, JI ;
Moon, JH ;
Hong, JH ;
Kang, JS ;
Fukuda, Y ;
Lee, YP .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1996, 14 (02) :293-298
[5]   LOW-RESISTIVITY TRANSPARENT IN2O3 FILMS PREPARED BY REACTIVE ION PLATING [J].
JEONG, JI ;
MOON, JH ;
HONG, JH ;
KANG, JS ;
LEE, YP .
APPLIED PHYSICS LETTERS, 1994, 64 (10) :1215-1217
[6]   DIRECT-CURRENT MAGNETRON-SPUTTERED IN2O3 FILMS AS TUNNEL BARRIERS [J].
KASIVISWANATHAN, S ;
RANGARAJAN, G .
JOURNAL OF APPLIED PHYSICS, 1994, 75 (05) :2572-2577
[7]   STRUCTURE AND CONDUCTANCE EVOLUTION OF VERY THIN INDIUM OXIDE-FILMS [J].
KOROBOV, V ;
LEIBOVITCH, M ;
SHAPIRA, Y .
APPLIED PHYSICS LETTERS, 1994, 65 (18) :2290-2292
[8]   Holographic recording in indium-oxide (In2O3) and indium-tin-oxide(In2O3:Sn) thin films [J].
Mailis, S ;
Boutsikaris, L ;
Vainos, NA ;
Xirouhaki, C ;
Vasiliou, G ;
Garawal, N ;
Kiriakidis, G ;
Fritzsche, H .
APPLIED PHYSICS LETTERS, 1996, 69 (17) :2459-2461
[9]   PLASMA METALORGANIC CHEMICAL VAPOR-DEPOSITION OF INDIUM OXIDE THIN-FILMS [J].
MARUYAMA, T ;
KITAMURA, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (07) :L1096-L1097
[10]   DEPENDENCE OF STRUCTURAL AND ELECTRICAL-PROPERTIES OF UNDOPED SPRAY-DEPOSITED INDIUM OXIDE THIN-FILMS ON DEPOSITION TEMPERATURE [J].
MIRZAPOUR, S ;
ROZATI, SM ;
TAKWALE, MG ;
MARATHE, BR ;
BHIDE, VG .
MATERIALS LETTERS, 1992, 13 (4-5) :275-278