Progress in InGaAs-GaAs selective-area MOCVD toward photonic integrated circuits

被引：66

作者：

Coleman, JJ

Lammert, RM

Osowski, ML

Jones, AM

机构：

[1] Microelectronics Laboratory, Univ. Illinois at Urbana-Champaign, Urbana

[2] University of Illinois, Urbana-Champaign, IL

[3] Ortel Corporation, Alhambra, CA

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 1997年 / 3卷 / 03期

基金：

美国国家科学基金会;

关键词：

crystal growth; integrated optoelectronics; quantum-well lasers; semiconductor growth; semiconductor lasers; semiconductor materials; strain;

D O I：

10.1109/2944.640641

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The progress toward integrated photonic devices by selective-area metalorganic chemical vapor deposition (MOCVD) is reviewed. Processing steps involved with fabricating buried heterostructures (BH's) by a three-step technique art outlined, and a computational model is presented that predicts the enhancement behavior of selective-area MOCVD. Results are reviewed for several discrete and integrated photonic devices. These include low-threshold BH lasers, laser diodes integrated with either intracavity or external cavity modulators, dual-channel emitters integrated with both modulators and passive y-junction waveguides, and broad-band light-emitting diodes (LED's).

引用

收藏

页码：874 / 884

页数：11

相关论文

共 67 条

[41] 16-wavelength gain-coupled DFB laser array with fine tunability [J].

Li, GP ;

Makino, T ;

Sarangan, A ;

Huang, W .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1996, 8 (01) :22-24

[42] A NOVEL TECHNIQUE FOR LOW-THRESHOLD AND HIGH-POWER INGAAS/GAAS STRAINED-LAYER 0.98-MU-M BURIED HETEROSTRUCTURE LASER FABRICATION [J].

LIOU, DC ;

CHIANG, WH ;

LEE, CP ;

CHANG, KH ;

LIU, DG ;

WU, JS ;

TU, YK .

JOURNAL OF APPLIED PHYSICS, 1992, 71 (03) :1525-1527

[43]

LOPATA J, 1992, P SOC PHOTO-OPT INS, V1676, P117, DOI 10.1117/12.137650

[44] LOW-THRESHOLD DISORDER-DEFINED BURIED HETEROSTRUCTURE STRAINED-LAYER ALYGA1-YAS-GAAS-INXGA1-XAS QUANTUM WELL LASERS (LAMBDA-APPROXIMATELY 910 NM) [J].

MAJOR, JS ;

GUIDO, LJ ;

HSIEH, KC ;

HOLONYAK, N ;

STUTIUS, W ;

GAVRILOVIC, P ;

WILLIAMS, JE .

APPLIED PHYSICS LETTERS, 1989, 54 (10) :913-915

[45] BROADER SPECTRAL WIDTH INGAASP STACKED ACTIVE LAYER SUPERLUMINESCENT DIODES [J].

MIKAMI, O ;

YASAKA, H ;

NOGUCHI, Y .

APPLIED PHYSICS LETTERS, 1990, 56 (11) :987-989

[46] METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

MILLER, LM ;

COLEMAN, JJ .

CRC CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 1988, 15 (01) :1-26

[47] LASER COMPATIBLE WAVE-GUIDE ELECTROABSORPTION MODULATOR WITH HIGH CONTRAST AND LOW OPERATING VOLTAGE IN GAAS/ALGAAS [J].

MOSS, D ;

LANDHEER, D ;

DELAGE, A ;

CHATENOUD, F ;

DION, M .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1991, 3 (07) :645-647

[48] MONOLITHIC INTEGRATION OF AN (AL)GAAS LASER AND AN INTRACAVITY ELECTROABSORPTION MODULATOR USING SELECTIVE PARTIAL INTERDIFFUSION [J].

OBRIEN, S ;

SHEALY, JR ;

WICKS, GW .

APPLIED PHYSICS LETTERS, 1991, 58 (13) :1363-1365

[49] A STRAINED-LAYER INGAAS-GAAS-ALGAAS SINGLE-QUANTUM-WELL BROAD-SPECTRUM LED BY SELECTIVE-AREA METALORGANIC CHEMICAL-VAPOR-DEPOSITION [J].

OSOWSKI, ML ;

COCKERILL, TM ;

LAMMERT, RM ;

FORBES, DV ;

ACKLEY, DE ;

COLEMAN, JJ .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1994, 6 (11) :1289-1292

[50] BROAD-BAND EMISSION FROM INGAAS-GAAS-ALGAAS LED WITH INTEGRATED ABSORBER BY SELECTIVE-AREA MOCVD [J].

OSOWSKI, ML ;

LAMMERT, RM ;

FORBES, DV ;

ACKLEY, DE ;

COLEMAN, JJ .

ELECTRONICS LETTERS, 1995, 31 (17) :1498-1499

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