Innovative advances in LED technology

被引：172

作者：

Yam, FK ^{[1
]}

Hassan, Z ^{[1
]}

机构：

[1] Univ Sains Malaysia, Sch Phys, George Town 11800, Malaysia

来源：

MICROELECTRONICS JOURNAL | 2005年 / 36卷 / 02期

关键词：

III-V semiconductors; high brightness LEDs; white LEDs;

D O I：

10.1016/j.mejo.2004.11.008

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An overview of the rapid progress in the developments of the inorganic light emitting diode (LED) technology is presented. Innovative structures and designs of the device have led to dramatic improvements of the performance in LED technology, groundbreaking performance records are being reported constantly. This article summaries the recent progress of the high brightness LEDs, and describes the LED structures from the basic pn homojunction, to heterojunction, and eventually the use of nano-scale low-dimensional structures in the device fabrication. Some of the novel structures and designs of the most recent developed high brightness LEDs, as well as the conventional and innovative ways of producing white LEDs are briefly discussed. (C) 2004 Elsevier Ltd. All rights reserved.

引用

页码：129 / 137

页数：9

共 49 条

[21] III-nitride quantum devices - Microphotonics [J].

Jiang, HX ;

Lin, JY .

CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 2003, 28 (02) :131-183

[22] AlCaInP light-emitting diodes [J].

Kish, FA ;

Fletcher, RM .

HIGH BRIGHTNESS LIGHT EMITTING DIODES, 1997, 48 :149-+

[23] Development of high efficiency GaN-based multiquantum-well light-emitting diodes and their applications [J].

Koike, M ;

Shibata, N ;

Kato, H ;

Takahashi, Y .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2002, 8 (02) :271-277

[24] Introduction to the issue on high-efficiency light-emitting diodes [J].

Krames, MR ;

Amano, H ;

Brown, JJ ;

Heremans, PL .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2002, 8 (02) :185-188

[25] AN EXPERIMENTAL-STUDY ON IMPROVEMENT OF PERFORMANCE FOR HEMISPHERICALLY SHAPED HIGH-POWER IREDS WITH GA1-XALXAS GROWN JUNCTIONS [J].

KURATA, K ;

ONO, Y ;

ITO, K ;

MORI, M ;

SANO, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (04) :374-379

[26] High-brightness inverted InGaN-GaN multiple-quantum-well light-emitting diodes without a transparent conductive layer [J].

Lee, CM ;

Chuo, CC ;

Chen, IL ;

Chang, JC ;

Chyi, JI .

IEEE ELECTRON DEVICE LETTERS, 2003, 24 (03) :156-158

[27]

MILLS A, 2004, ADV SEMICONDUCTOR MA, V17, P40

[28] HIGH-POWER INGAN/GAN DOUBLE-HETEROSTRUCTURE VIOLET LIGHT-EMITTING-DIODES [J].

NAKAMURA, S ;

SENOH, M ;

MUKAI, T .

APPLIED PHYSICS LETTERS, 1993, 62 (19) :2390-2392

[29] HIGH-POWER GAN P-N-JUNCTION BLUE-LIGHT-EMITTING DIODES [J].

NAKAMURA, S ;

MUKAI, T ;

SENOH, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (12A) :L1998-L2001

[30]

NAKAMURA S, 1997, BLUE LASER DIODES

← 1 2 3 4 5 →