Analysis of trap state densities at HfO2/In0.53Ga0.47As interfaces

被引：64

作者：

Hwang, Yoontae ^{[1
]}

Engel-Herbert, Roman ^{[1
]}

Rudawski, Nicholas G. ^{[1
]}

Stemmer, Susanne ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 10期

关键词：

SEMICONDUCTOR; INSULATOR; MODEL; GAP;

D O I：

10.1063/1.3360221

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

HfO2 was deposited on n- and p-type In0.53Ga0.47As by chemical beam deposition. Interface trap densities (D-it) and their energy level distribution were quantified using the conductance method in a wide temperature range (77 to 300 K). A trap level close to the intrinsic energy level caused the D-it to rise above 10(13) cm(-2) eV(-1). The trap level at midgap gives rise to false inversion behavior in the capacitance-voltage curves for n-type channels at room temperature. The apparent decrease of the D-it close to the band edges is discussed. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3360221]

引用

页数：3

共 18 条

[1] Capacitance-Voltage Characterization of GaAs-Oxide Interfaces [J].

Brammertz, G. ;

Lin, H. C. ;

Martens, K. ;

Mercier, D. ;

Merckling, C. ;

Penaud, J. ;

Adelmann, C. ;

Sioncke, S. ;

Wang, W. E. ;

Caymax, M. ;

Meuris, M. ;

Heyns, M. .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2008, 155 (12) :H945-H950

[2] On the interface state density at In0.53Ga0.47As/oxide interfaces [J].

Brammertz, G. ;

Lin, H-C. ;

Caymax, M. ;

Meuris, M. ;

Heyns, M. ;

Passlack, M. .

APPLIED PHYSICS LETTERS, 2009, 95 (20)

[3] Self-cleaning and surface recovery with arsine pretreatment in ex situ atomic-layer-deposition of Al2O3 on GaAs [J].

Cheng, Cheng-Wei ;

Hennessy, John ;

Antoniadis, Dimitri ;

Fitzgerald, Eugene A. .

APPLIED PHYSICS LETTERS, 2009, 95 (08)

[4] Metal-oxide-semiconductor capacitors with ZrO2 dielectrics grown on In0.53Ga0.47As by chemical beam deposition [J].

Engel-Herbert, Roman ;

Hwang, Yoontae ;

Cagnon, Joel ;

Stemmer, Susanne .

APPLIED PHYSICS LETTERS, 2009, 95 (06)

[5] InGaAs metal-oxide-semiconductor capacitors with HfO2 gate dielectric grown by atomic-layer deposition [J].

Goel, N. ;

Majhi, P. ;

Chui, C. O. ;

Tsai, W. ;

Choi, D. ;

Harris, J. S. .

APPLIED PHYSICS LETTERS, 2006, 89 (16)

[6] UNIFIED DISORDER INDUCED GAP STATE MODEL FOR INSULATOR-SEMICONDUCTOR AND METAL-SEMICONDUCTOR INTERFACES [J].

HASEGAWA, H ;

OHNO, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04) :1130-1138

[7] Border traps in Al2O3/In0.53Ga0.47As (100) gate stacks and their passivation by hydrogen anneals [J].

Kim, Eun Ji ;

Wang, Lingquan ;

Asbeck, Peter M. ;

Saraswat, Krishna C. ;

McIntyre, Paul C. .

APPLIED PHYSICS LETTERS, 2010, 96 (01)

[8] Atomically abrupt and unpinned Al2O3/In0.53Ga0.47As interfaces: Experiment and simulation [J].

Kim, Eun Ji ;

Chagarov, Evgueni ;

Cagnon, Joel ;

Yuan, Yu ;

Kummel, Andrew C. ;

Asbeck, Peter M. ;

Stemmer, Susanne ;

Saraswat, Krishna C. ;

McIntyre, Paul C. .

JOURNAL OF APPLIED PHYSICS, 2009, 106 (12)

[9] In0.53Ga0.47As based metal oxide semiconductor capacitors with atomic layer deposition ZrO2 gate oxide demonstrating low gate leakage current and equivalent oxide thickness less than 1 nm [J].

Koveshnikov, S. ;

Goel, N. ;

Majhi, P. ;

Wen, H. ;

Santos, M. B. ;

Oktyabrsky, S. ;

Tokranov, V. ;

Kambhampati, R. ;

Moore, R. ;

Zhu, F. ;

Lee, J. ;

Tsai, W. .

APPLIED PHYSICS LETTERS, 2008, 92 (22)

[10] Achieving 1 nm capacitive effective thickness in atomic layer deposited HfO2 on In0.53Ga0.47As [J].

Lee, K. Y. ;

Lee, Y. J. ;

Chang, P. ;

Huang, M. L. ;

Chang, Y. C. ;

Hong, M. ;

Kwo, J. .

APPLIED PHYSICS LETTERS, 2008, 92 (25)

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