Growth of InGaN self-assembled quantum dots and their application to lasers

被引：22

作者：

Tachibana, K

Someya, T

Arakawa, Y

机构：

[1] Univ Tokyo, Inst Ind Sci, Tokyo, Japan

[2] Univ Tokyo, Adv Sci & Technol Res Ctr, Tokyo, Japan

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2000年 / 6卷 / 03期

基金：

日本学术振兴会;

关键词：

InGaN; lasing oscillation; metalorganic chemical vapor deposition (MOCVD); quantum dots;

D O I：

10.1109/2944.865102

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have successfully grown InGaN self-assembled quantum dots (QD's) on a GaN layer, using atmospheric-pressure metalorganic chemical vapor deposition (MOCVD), The average diameter of the on's was as small as 8.4 nm, and strong emission from the on's was observed at room temperature. Next, we have investigated a structure in which InGaN QD's were stacked to increase the total on density. InGaN QD's were formed even when the number of stacked layers was ten. As the number of layers increased, the photoluminescence (PL) intensity increased drastically. Moreover, we have fabricated a laser structure with InGaN QD's embedded into the active layer, A clear threshold of 6.0 mJ/cm(2) was observed in the dependence of the emission intensity on the excitation energy at room temperature under optical excitation, Above the threshold, the emission was strongly polarized in the transverse electric (TE) mode, and the linewidth of the emission spectra was reduced to below 0.1 nm (resolution limit). The peak wavelength was around 405 nm, These results indicate lasing action at room temperature.

引用

页码：475 / 481

页数：7

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