A 900-MHz fully integrated SOI power amplifier for single-chip wireless transceiver applications

被引：28

作者：

Tan, Y ^{[1
]}

Kumar, M ^{[1
]}

Sin, JKO ^{[1
]}

Shi, LX ^{[1
]}

Lau, J ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Kowloon, Hong Kong, Peoples R China

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2000年 / 35卷 / 10期

关键词：

class E power amplifier; integrated power amplifier; LDMOS transistor; RFIC; SOI; wireless transceiver;

D O I：

10.1109/4.871326

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a silicon-on-insulator (SOI) fully integrated RF power amplifier for single-chip wireless transceiver applications. The integrated power amplifier (IPA) operates at 900 MHz, and is designed and fabricated using a 1.5-mu m SOI LDMOS/CMOS/BJT technology. This technology is suitable for the complete integration of the front-end circuits with the baseband circuits for low-cost low-power high-volume production of single-chip transceivers. The IPA is a two-stage Class E power amplifier. It is fabricated along with the on-chip input and output matching networks, Thus, no external components are needed. At 900 MHz and with a 5-V supply, the power amplifier delivers 23-dBm output power to a 50-Omega load with 16-dB gain and 49% power-added efficiency.

引用

页码：1481 / 1486

页数：6

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