Surface segregation of photoresist copolymers containing polyhedral oligomeric silsesquioxanes studied by x-ray photoelectron spectroscopy

被引：14

作者：

Eon, D

Cartry, G

Fernandez, V

Cardinaud, C

Tegou, E

Bellas, V

Argitis, P

Gogolides, E

机构：

[1] Inst Mat Jean Rouxel, Lab Plasmas & Couches Minces, F-44322 Nantes, France

[2] Inst Microelect NCRS Demokritos, Aghia Paraskevi 15310, Greece

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2004年 / 22卷 / 05期

关键词：

D O I：

10.1116/1.1798871

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Copolymers containing polyhedral oligomeric silsesquioxane (POSS) pendant groups and various acrylate type monomers are studied by x-ray photoelectron spectroscopy. These copolymers have potential application as bilayer resist material for next generation lithography. Two methods are used in order to characterize resist surfaces, angular resolved XPS and inelastic background signal quantification (Tougaard method). The existence of a surface layer rich in POSS is proven. About 1.5 nm thick, this layer stands above a material with uniform POSS concentration. Evaluation of POSS concentration depth profiles shows that surface segregation depends on the polymer comonomers and on the silicon content. (C) 2004 American Vacuum Society.

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页码：2526 / 2532

页数：7

相关论文

共 27 条

[1] Surface morphology of PS-PDMS diblock copolymer films [J].

Andersen, TH ;

Tougaard, S ;

Larsen, NB ;

Almdal, K ;

Johannsen, I .

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 2001, 121 (1-3) :93-110

[2]

Beamson G., HIGH RESOLUTION XPS

[3] Evaluation of siloxane and polyhedral silsesquioxane copolymers for 157 nm lithography [J].

Bellas, V ;

Tegou, E ;

Raptis, I ;

Gogolides, E ;

Argitis, P ;

Iatrou, H ;

Hadjichristidis, N ;

Sarantopoulou, E ;

Cefalas, AC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (06) :2902-2908

[4] A STANDARD FORM OF SPECTRA FOR QUANTITATIVE ESCA-ANALYSIS [J].

BERRESHEIM, K ;

MATTERNKLOSSON, M ;

WILMERS, M .

FRESENIUS JOURNAL OF ANALYTICAL CHEMISTRY, 1991, 341 (1-2) :121-124

[5] Absorbance and outgasing of photoresist polymeric materials for UV lithography below 193 nm including 157 nm lithography [J].

Cefalas, AC ;

Sarantopoulou, E ;

Gogolides, E ;

Argitis, P .

MICROELECTRONIC ENGINEERING, 2000, 53 (1-4) :123-126

[6] ANGLE-RESOLVED XPS AND AES - DEPTH-RESOLUTION LIMITS AND A GENERAL COMPARISON OF PROPERTIES OF DEPTH-PROFILE RECONSTRUCTION METHODS [J].

CUMPSON, PJ .

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1995, 73 (01) :25-52

[7] Surface modification of Si-containing polymers during etching for bilayer lithography [J].

Eon, D ;

de Poucques, L ;

Peignon, MC ;

Cardinaud, C ;

Turban, G ;

Tserepi, A ;

Cordoyiannis, G ;

Valamontes, ES ;

Raptis, I ;

Gogolides, E .

MICROELECTRONIC ENGINEERING, 2002, 61-2 :901-906

[8] SURFACE ANALYSIS AND ANGULAR-DISTRIBUTIONS IN X-RAY PHOTOELECTRON-SPECTROSCOPY [J].

FADLEY, CS ;

BAIRD, RJ ;

SIEKHAUS, W ;

NOVAKOV, T ;

BERGSTROM, SA .

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1974, 4 (02) :93-137

[9] Structural development during deformation of polyurethane containing polyhedral oligomeric silsesquioxanes (POSS) molecules [J].

Fu, BX ;

Hsiao, BS ;

Pagola, S ;

Stephens, P ;

White, H ;

Rafailovich, M ;

Sokolov, J ;

Mather, PT ;

Jeon, HG ;

Phillips, S ;

Lichtenhan, J ;

Schwab, J .

POLYMER, 2001, 42 (02) :599-611

[10] Combinatorial approach for the synthesis of terpolymers and their novel application as very-high-contrast resists for x-ray nanolithography [J].

Gonsalves, KE ;

Wang, JZ ;

Wu, HP .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (01) :325-327