Reactive ion etching of indium nitride using CH4 and H2 gases

被引：4

作者：

Guo, QX ^{[1
]}

Matsuse, M ^{[1
]}

Nishio, M ^{[1
]}

Ogawa, H ^{[1
]}

机构：

[1] Saga Univ, Fac Sci & Engn, Dept Elect & Elect Engn, Saga 8408502, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2000年 / 39卷 / 9A期

关键词：

indium nitride; reactive ion etching; CH4 and H-2 gases; etching rate; surface morphology;

D O I：

10.1143/JJAP.39.5048

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied the characteristics of reactive ion etching of indium nitride layers using CH4 and H-2 gases. The effects of CH4/H-2 gas composition. total gas pressure, and plasma power on the etching rates were investigated. It was found that variation of the CH4 concentration in gas mixtures leads to changes in both the etching rate and the surface morphology. A smooth etched InN surface was obtained in the range of 5-15% CH4 concentration and 25-55 Pa pressure. The etching rate of InN increases from 260 to 1310 Angstrom/min with increasing the plasma power from 100 to 300 W at a 10% CH4 concentration and 45 Pa pressure.

引用

页码：5048 / 5051

页数：4

共 20 条

[1] Shortest wavelength semiconductor laser diode [J].

Akasaki, I ;

Sota, S ;

Sakai, H ;

Tanaka, T ;

Koike, M ;

Amano, H .

ELECTRONICS LETTERS, 1996, 32 (12) :1105-1106

[2] THERMAL-STABILITY OF INDIUM NITRIDE SINGLE-CRYSTAL FILMS [J].

GUO, Q ;

KATO, O ;

YOSHIDA, A .

JOURNAL OF APPLIED PHYSICS, 1993, 73 (11) :7969-7971

[3] Effects of nitrogen argon ratio on composition and structure of InN films prepared by r.f. magnetron sputtering [J].

Guo, QX ;

Shingai, N ;

Mitsuishi, Y ;

Nishio, M ;

Ogawa, H .

THIN SOLID FILMS, 1999, 343 :524-527

[4] Optical properties of indium nitride in vacuum ultraviolet region [J].

Guo, QX ;

Ogawa, H ;

Yoshida, A .

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1996, 79 :9-12

[5] OPTICAL-CONSTANTS OF INDIUM NITRIDE [J].

GUO, QX ;

KATO, O ;

FUJISAWA, M ;

YOSHIDA, A .

SOLID STATE COMMUNICATIONS, 1992, 83 (09) :721-723

[6] Electronic structure of indium nitride studied by photoelectron spectroscopy [J].

Guo, QX ;

Nishio, M ;

Ogawa, H ;

Wakahara, A ;

Yoshida, A .

PHYSICAL REVIEW B, 1998, 58 (23) :15304-15306

[7] STRUCTURAL-PROPERTIES OF INN FILMS GROWN ON SAPPHIRE SUBSTRATES BY MICROWAVE-EXCITED METALORGANIC VAPOR-PHASE EPITAXY [J].

GUO, QX ;

YAMAMURA, T ;

YOSHIDA, A ;

ITOH, N .

JOURNAL OF APPLIED PHYSICS, 1994, 75 (10) :4927-4932

[8] Deposition of InN thin films by radio frequency magnetron sputtering [J].

Guo, QX ;

Shingai, N ;

Nishio, M ;

Ogawa, H .

JOURNAL OF CRYSTAL GROWTH, 1998, 189 :466-470

[9] GROWTH OF INN FILMS ON GAAS(111) AND GAP(111) SUBSTRATES BY MICROWAVE-EXCITED METALORGANIC VAPOR-PHASE EPITAXY [J].

GUO, QX ;

OGAWA, H ;

YAMANO, H ;

YOSHIDA, A .

APPLIED PHYSICS LETTERS, 1995, 66 (06) :715-717

[10] Low-temperature growth of InN films on (111)GaAs substrates [J].

Guo, QX ;

Nishio, M ;

Ogawa, H ;

Yoshida, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (5A) :L490-L491

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