Scanning gate microscopy of current-annealed single layer graphene

被引：40

作者：

Connolly, M. R. ^{[1
]}

Chiou, K. L. ^{[1
]}

Smith, C. G. ^{[1
]}

Anderson, D. ^{[1
]}

Jones, G. A. C. ^{[1
]}

Lombardo, A. ^{[2
,3
]}

Fasoli, A. ^{[3
]}

Ferrari, A. C. ^{[3
]}

机构：

[1] Univ Cambridge, Cavendish Lab, Dept Phys, Cambridge CB3 0HE, England

[2] Univ Palermo, Dipartimento Ingn Elettr Elettron & Telecomunicaz, I-90128 Palermo, Italy

[3] Univ Cambridge, Dept Engn, Cambridge CB3 OFA, England

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 11期

基金：

英国工程与自然科学研究理事会;

关键词：

annealing; current density; electrical conductivity; electron-hole recombination; graphene; scanning probe microscopy; CHARGE INHOMOGENEITY; TRANSPORT;

D O I：

10.1063/1.3327829

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have used scanning gate microscopy to explore the local conductivity of a current-annealed graphene flake. A map of the local neutrality point (NP) after annealing at low current density exhibits micron-sized inhomogeneities. Broadening of the local e-h transition is also correlated with the inhomogeneity of the NP. Annealing at higher current density reduces the NP inhomogeneity, but we still observe some asymmetry in the e-h conduction. We attribute this to a hole-doped domain close to one of the metal contacts combined with underlying striations in the local NP.

引用

页数：3

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