Scanning gate microscopy of current-annealed single layer graphene

被引：40

作者：

Connolly, M. R. ^{[1
]}

Chiou, K. L. ^{[1
]}

Smith, C. G. ^{[1
]}

Anderson, D. ^{[1
]}

Jones, G. A. C. ^{[1
]}

Lombardo, A. ^{[2
,3
]}

Fasoli, A. ^{[3
]}

Ferrari, A. C. ^{[3
]}

机构：

[1] Univ Cambridge, Cavendish Lab, Dept Phys, Cambridge CB3 0HE, England

[2] Univ Palermo, Dipartimento Ingn Elettr Elettron & Telecomunicaz, I-90128 Palermo, Italy

[3] Univ Cambridge, Dept Engn, Cambridge CB3 OFA, England

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 11期

基金：

英国工程与自然科学研究理事会;

关键词：

annealing; current density; electrical conductivity; electron-hole recombination; graphene; scanning probe microscopy; CHARGE INHOMOGENEITY; TRANSPORT;

D O I：

10.1063/1.3327829

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have used scanning gate microscopy to explore the local conductivity of a current-annealed graphene flake. A map of the local neutrality point (NP) after annealing at low current density exhibits micron-sized inhomogeneities. Broadening of the local e-h transition is also correlated with the inhomogeneity of the NP. Annealing at higher current density reduces the NP inhomogeneity, but we still observe some asymmetry in the e-h conduction. We attribute this to a hole-doped domain close to one of the metal contacts combined with underlying striations in the local NP.

引用

页数：3

共 32 条

[11] Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor [J].

Das, A. ;

Pisana, S. ;

Chakraborty, B. ;

Piscanec, S. ;

Saha, S. K. ;

Waghmare, U. V. ;

Novoselov, K. S. ;

Krishnamurthy, H. R. ;

Geim, A. K. ;

Ferrari, A. C. ;

Sood, A. K. .

NATURE NANOTECHNOLOGY, 2008, 3 (04) :210-215

[12] Spatially resolved spectroscopy of monolayer graphene on SiO2 [J].

Deshpande, A. ;

Bao, W. ;

Miao, F. ;

Lau, C. N. ;

LeRoy, B. J. .

PHYSICAL REVIEW B, 2009, 79 (20)

[13] Fractional quantum Hall effect and insulating phase of Dirac electrons in graphene [J].

Du, Xu ;

Skachko, Ivan ;

Duerr, Fabian ;

Luican, Adina ;

Andrei, Eva Y. .

NATURE, 2009, 462 (7270) :192-195

[14] Behavior of a chemically doped graphene junction [J].

Farmer, Damon B. ;

Lin, Yu-Ming ;

Afzali-Ardakani, Ali ;

Avouris, Phaedon .

APPLIED PHYSICS LETTERS, 2009, 94 (21)

[15] Raman spectrum of graphene and graphene layers [J].

Ferrari, A. C. ;

Meyer, J. C. ;

Scardaci, V. ;

Casiraghi, C. ;

Lazzeri, M. ;

Mauri, F. ;

Piscanec, S. ;

Jiang, D. ;

Novoselov, K. S. ;

Roth, S. ;

Geim, A. K. .

PHYSICAL REVIEW LETTERS, 2006, 97 (18)

[16] Energy Dissipation in Graphene Field-Effect Transistors [J].

Freitag, Marcus ;

Steiner, Mathias ;

Martin, Yves ;

Perebeinos, Vasili ;

Chen, Zhihong ;

Tsang, James C. ;

Avouris, Phaedon .

NANO LETTERS, 2009, 9 (05) :1883-1888

[17] The rise of graphene [J].

Geim, A. K. ;

Novoselov, K. S. .

NATURE MATERIALS, 2007, 6 (03) :183-191

[18] Energy band-gap engineering of graphene nanoribbons [J].

Han, Melinda Y. ;

Oezyilmaz, Barbaros ;

Zhang, Yuanbo ;

Kim, Philip .

PHYSICAL REVIEW LETTERS, 2007, 98 (20)

[19] Contact and edge effects in graphene devices [J].

Lee, Eduardo J. H. ;

Balasubramanian, Kannan ;

Weitz, Ralf Thomas ;

Burghard, Marko ;

Kern, Klaus .

NATURE NANOTECHNOLOGY, 2008, 3 (08) :486-490

[20] Four-Terminal Magneto-Transport in Graphene p-n Junctions Created by Spatially Selective Doping [J].

Lohmann, Timm ;

von Klitzing, Klaus ;

Smet, Jurgen H. .

NANO LETTERS, 2009, 9 (05) :1973-1979

← 1 2 3 4 →