Scanning gate microscopy of current-annealed single layer graphene

被引：40

作者：

Connolly, M. R. ^{[1
]}

Chiou, K. L. ^{[1
]}

Smith, C. G. ^{[1
]}

Anderson, D. ^{[1
]}

Jones, G. A. C. ^{[1
]}

Lombardo, A. ^{[2
,3
]}

Fasoli, A. ^{[3
]}

Ferrari, A. C. ^{[3
]}

机构：

[1] Univ Cambridge, Cavendish Lab, Dept Phys, Cambridge CB3 0HE, England

[2] Univ Palermo, Dipartimento Ingn Elettr Elettron & Telecomunicaz, I-90128 Palermo, Italy

[3] Univ Cambridge, Dept Engn, Cambridge CB3 OFA, England

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 11期

基金：

英国工程与自然科学研究理事会;

关键词：

annealing; current density; electrical conductivity; electron-hole recombination; graphene; scanning probe microscopy; CHARGE INHOMOGENEITY; TRANSPORT;

D O I：

10.1063/1.3327829

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have used scanning gate microscopy to explore the local conductivity of a current-annealed graphene flake. A map of the local neutrality point (NP) after annealing at low current density exhibits micron-sized inhomogeneities. Broadening of the local e-h transition is also correlated with the inhomogeneity of the NP. Annealing at higher current density reduces the NP inhomogeneity, but we still observe some asymmetry in the e-h conduction. We attribute this to a hole-doped domain close to one of the metal contacts combined with underlying striations in the local NP.

引用

页数：3

共 32 条

[21] Observation of electron-hole puddles in graphene using a scanning single-electron transistor [J].

Martin, J. ;

Akerman, N. ;

Ulbricht, G. ;

Lohmann, T. ;

Smet, J. H. ;

Von Klitzing, K. ;

Yacoby, A. .

NATURE PHYSICS, 2008, 4 (02) :144-148

[22] Current-induced cleaning of graphene [J].

Moser, J. ;

Barreiro, A. ;

Bachtold, A. .

APPLIED PHYSICS LETTERS, 2007, 91 (16)

[23] Role of contacts in graphene transistors: A scanning photocurrent study [J].

Mueller, T. ;

Xia, F. ;

Freitag, M. ;

Tsang, J. ;

Avouris, Ph. .

PHYSICAL REVIEW B, 2009, 79 (24)

[24] Electric field effect in atomically thin carbon films [J].

Novoselov, KS ;

Geim, AK ;

Morozov, SV ;

Jiang, D ;

Zhang, Y ;

Dubonos, SV ;

Grigorieva, IV ;

Firsov, AA .

SCIENCE, 2004, 306 (5696) :666-669

[25] Electronic transport in locally gated graphene nanoconstrictions [J].

Oezyilmaz, Barbaros ;

Jarillo-Herrero, Pablo ;

Efetov, Dmitri ;

Kim, Philip .

APPLIED PHYSICS LETTERS, 2007, 91 (19)

[26] Effect of a High-κ Environment on Charge Carrier Mobility in Graphene [J].

Ponomarenko, L. A. ;

Yang, R. ;

Mohiuddin, T. M. ;

Katsnelson, M. I. ;

Novoselov, K. S. ;

Morozov, S. V. ;

Zhukov, A. A. ;

Schedin, F. ;

Hill, E. W. ;

Geim, A. K. .

PHYSICAL REVIEW LETTERS, 2009, 102 (20)

[27] n-Type Behavior of Graphene Supported on Si/SiO2 Substrates [J].

Romero, Hugo E. ;

Shen, Ning ;

Joshi, Prasoon ;

Gutierrez, Humberto R. ;

Tadigadapa, Srinivas A. ;

Sofo, Jorge O. ;

Eklund, Peter C. .

ACS NANO, 2008, 2 (10) :2037-2044

[28] Effective medium theory for disordered two-dimensional graphene [J].

Rossi, Enrico ;

Adam, S. ;

Das Sarma, S. .

PHYSICAL REVIEW B, 2009, 79 (24)

[29] Raman imaging of doping domains in graphene on SiO2 [J].

Stampfer, C. ;

Molitor, F. ;

Graf, D. ;

Ensslin, K. ;

Jungen, A. ;

Hierold, C. ;

Wirtz, L. .

APPLIED PHYSICS LETTERS, 2007, 91 (24)

[30] N-Doping of Graphene Through Electrothermal Reactions with Ammonia [J].

Wang, Xinran ;

Li, Xiaolin ;

Zhang, Li ;

Yoon, Youngki ;

Weber, Peter K. ;

Wang, Hailiang ;

Guo, Jing ;

Dai, Hongjie .

SCIENCE, 2009, 324 (5928) :768-771

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