Mechanism of electric-pulse-induced resistance switching in manganites

被引:117
作者
Quintero, M.
Levy, P.
Leyva, A. G.
Rozenberg, M. J.
机构
[1] CAC, CNEA, Dept Fis, RA-1650 Buenos Aires, DF, Argentina
[2] UNSAM, Escuela Ciencia & Tecnol, RA-1650 Buenos Aires, DF, Argentina
[3] Univ Paris 11, Lab Phys Solides, CNRS UMR 8502, F-91405 Orsay, France
[4] Univ Buenos Aires, Dept Fis, FCEN, RA-1428 Buenos Aires, DF, Argentina
关键词
D O I
10.1103/PhysRevLett.98.116601
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We investigate the electric-pulse-induced resistance switching in manganite systems. We find a "complementarity" effect where the contact resistance of electrodes at opposite ends show variations of opposite sign and is reversible. The temperature dependence of the magnitude of the effect reveals a dramatic enhancement at a temperature T-*, below the metal-insulator transition. We qualitatively capture these features with a theoretical model, providing evidence for the physical mechanism of the resistance switching. We argue that doping control of the electronic state of the oxide at the interfaces is the mechanism driving the effect.
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页数:4
相关论文
共 29 条
[1]   Field-driven hysteretic and reversible resistive switch at the Ag-Pr0.7Ca0.3MnO3 interface [J].
Baikalov, A ;
Wang, YQ ;
Shen, B ;
Lorenz, B ;
Tsui, S ;
Sun, YY ;
Xue, YY ;
Chu, CW .
APPLIED PHYSICS LETTERS, 2003, 83 (05) :957-959
[2]   Reproducible switching effect in thin oxide films for memory applications [J].
Beck, A ;
Bednorz, JG ;
Gerber, C ;
Rossel, C ;
Widmer, D .
APPLIED PHYSICS LETTERS, 2000, 77 (01) :139-141
[3]   Intrinsic inhomogeneities in manganite thin films investigated with scanning tunneling spectroscopy [J].
Becker, T ;
Streng, C ;
Luo, Y ;
Moshnyaga, V ;
Damaschke, B ;
Shannon, N ;
Samwer, K .
PHYSICAL REVIEW LETTERS, 2002, 89 (23) :237203/1-237203/4
[4]   An interfacial investigation of high-dielectric constant material hafnium oxide on Si substrate [J].
Chen, SC ;
Lou, JC ;
Chien, CH ;
Liu, PT ;
Chang, TC .
THIN SOLID FILMS, 2005, 488 (1-2) :167-172
[5]   Direct resistance profile for an electrical pulse induced resistance change device [J].
Chen, X ;
Wu, NJ ;
Strozier, J ;
Ignatiev, A .
APPLIED PHYSICS LETTERS, 2005, 87 (23) :1-3
[6]   Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition -: art. no. 033715 [J].
Choi, BJ ;
Jeong, DS ;
Kim, SK ;
Rohde, C ;
Choi, S ;
Oh, JH ;
Kim, HJ ;
Hwang, CS ;
Szot, K ;
Waser, R ;
Reichenberg, B ;
Tiedke, S .
JOURNAL OF APPLIED PHYSICS, 2005, 98 (03)
[7]   Complexity in strongly correlated electronic systems [J].
Dagotto, E .
SCIENCE, 2005, 309 (5732) :257-262
[8]  
Dagotto E., 2002, NANOSCALE PHASE SEPA
[9]   ELECTRICAL PHENOMENA IN AMORPHOUS OXIDE FILMS [J].
DEARNALEY, G ;
STONEHAM, AM ;
MORGAN, DV .
REPORTS ON PROGRESS IN PHYSICS, 1970, 33 (11) :1129-+
[10]   Retention behavior of the electric-pulse-induced reversible resistance change effect in Ag-La0.7Ca0.3MnO3-Pt sandwiches -: art. no. 172107 [J].
Dong, R ;
Wang, Q ;
Chen, LD ;
Shang, DS ;
Chen, TL ;
Li, XM ;
Zhang, WQ .
APPLIED PHYSICS LETTERS, 2005, 86 (17) :1-3