Mechanism of electric-pulse-induced resistance switching in manganites

被引:117
作者
Quintero, M.
Levy, P.
Leyva, A. G.
Rozenberg, M. J.
机构
[1] CAC, CNEA, Dept Fis, RA-1650 Buenos Aires, DF, Argentina
[2] UNSAM, Escuela Ciencia & Tecnol, RA-1650 Buenos Aires, DF, Argentina
[3] Univ Paris 11, Lab Phys Solides, CNRS UMR 8502, F-91405 Orsay, France
[4] Univ Buenos Aires, Dept Fis, FCEN, RA-1428 Buenos Aires, DF, Argentina
关键词
D O I
10.1103/PhysRevLett.98.116601
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We investigate the electric-pulse-induced resistance switching in manganite systems. We find a "complementarity" effect where the contact resistance of electrodes at opposite ends show variations of opposite sign and is reversible. The temperature dependence of the magnitude of the effect reveals a dramatic enhancement at a temperature T-*, below the metal-insulator transition. We qualitatively capture these features with a theoretical model, providing evidence for the physical mechanism of the resistance switching. We argue that doping control of the electronic state of the oxide at the interfaces is the mechanism driving the effect.
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页数:4
相关论文
共 29 条
[11]   Giant resistance switching in metal-insulator-manganite junctions: Evidence for Mott transition [J].
Fors, R ;
Khartsev, SI ;
Grishin, AM .
PHYSICAL REVIEW B, 2005, 71 (04)
[12]  
FURUKAWA N, 1999, PHYS MANGANITES
[13]   Dynamical mean-field theory of strongly correlated fermion systems and the limit of infinite dimensions [J].
Georges, A ;
Kotliar, G ;
Krauth, W ;
Rozenberg, MJ .
REVIEWS OF MODERN PHYSICS, 1996, 68 (01) :13-125
[14]   Giant and stable conductivity switching behaviors in ZrO2 films deposited by pulsed laser depositions [J].
Kim, S ;
Byun, I ;
Hwang, I ;
Kim, J ;
Choi, J ;
Park, BH ;
Seo, S ;
Lee, MJ ;
Seo, DH ;
Suh, DS ;
Joung, YS ;
Yoo, IK .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (8-11) :L345-L347
[15]   Electric-pulse-induced reversible resistance change effect in magnetoresistive films [J].
Liu, SQ ;
Wu, NJ ;
Ignatiev, A .
APPLIED PHYSICS LETTERS, 2000, 76 (19) :2749-2751
[16]   Colossal electroresistance of a Pr0.7Ca0.3MnO3 thin film at room temperature -: art. no. 224403 [J].
Odagawa, A ;
Sato, H ;
Inoue, IH ;
Akoh, H ;
Kawasaki, M ;
Tokura, Y ;
Kanno, T ;
Adachi, H .
PHYSICAL REVIEW B, 2004, 70 (22) :224403-1
[17]   BISTABLE SWITCHING IN ELECTROFORMED METAL-INSULATOR-METAL DEVICES [J].
PAGNIA, H ;
SOTNIK, N .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1988, 108 (01) :11-65
[18]  
Pergament AL, 2004, PHYS STATUS SOLIDI A, V201, P1543, DOI [10.1002/pssa.200306804, 10.1002/pass.200306804]
[19]   Simultaneous electric and magnetic field induced nonvolatile memory [J].
Quintero, M ;
Leyva, AG ;
Levy, P .
APPLIED PHYSICS LETTERS, 2005, 86 (24) :1-3
[20]   Strong electron correlation effects in nonvolatile electronic memory devices -: art. no. 033510 [J].
Rozenberg, MJ ;
Inoue, IH ;
Sánchez, MJ .
APPLIED PHYSICS LETTERS, 2006, 88 (03) :1-3