Fe/Si(111) interface formation studied by photoelectron diffraction

被引：16

作者：

Avila, J

Mascaraque, A

Teodorescu, C

Michel, EG

Asensio, MC

机构：

[1] INST CIENCIA MAT NICOLAS CABRERA,MADRID 28049,SPAIN

[2] UNIV AUTONOMA MADRID,DEPT FIS MAT CONDENSADA,E-28049 MADRID,SPAIN

[3] CSIC,INST CIENCIA MAT,E-28049 MADRID,SPAIN

[4] LAB UTILISAT RAYONNEMENT ELECTROMAGNET,F-91405 ORSAY,FRANCE

来源：

SURFACE SCIENCE | 1997年 / 377卷 / 1-3期

关键词：

iron; metal-semiconductor interfaces; photoelectron diffraction; photoelectron emission; silicides; silicon;

D O I：

10.1016/S0039-6028(96)01496-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The early stages of the interface formation of Fe deposited on Si(111)-(7 x 7) have been investigated as a function of Fe coverage and annealing temperature using the photoelectron diffraction technique. The intensity variation of the Si 2p and Fe 3p core levels was monitored in a full emission cone of a 60 degrees polar angle and a 360 degrees azimuthal angle. Annealing of 1 ML Fe to 150 degrees C produces a well-ordered interface. From a detailed analysis of the intensity modulations of both core levels as a function of emission angles, we deduce that Fe atoms occupy substitutional positions underneath a top silicon layer.

引用

收藏

页码：856 / 860

页数：5

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