Bias-temperature instability in single-layer graphene field-effect transistors

被引：39

作者：

Illarionov, Yu Yu ^{[1
,2
]}

Smith, A. D. ^{[3
]}

Vaziri, S. ^{[3
]}

Ostling, M. ^{[3
]}

Mueller, T. ^{[4
]}

Lemme, M. C. ^{[5
]}

Grasser, T. ^{[1
]}

机构：

[1] Inst Microelect TU Wien, A-1040 Vienna, Austria

[2] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[3] KTH Royal Inst Technol, S-16440 Kista, Sweden

[4] Inst Photon TU Wien, A-1040 Vienna, Austria

[5] Univ Siegen, D-57076 Siegen, Germany

来源：

APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 14期

关键词：

MECHANISMS; NOISE; GATE;

D O I：

10.1063/1.4897344

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a detailed analysis of the bias-temperature instability (BTI) of single-layer graphene field-effect transistors. Both negative BTI and positive BTI can be benchmarked using models developed for Si technologies. In particular, recovery follows the universal relaxation trend and can be described using the established capture/emission time map approach. We thereby propose a general methodology for assessing the reliability of graphene/dielectric interfaces, which are essential building blocks of graphene devices. (C) 2014 AIP Publishing LLC.

引用

页数：5

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