Orientation control of metalorganic chemical vapor deposition-Bi4Ti3O12 thin film by sequential source gas supply method

被引：28

作者：

Watanabe, T ^{[1
]}

Funakubo, H ^{[1
]}

机构：

[1] Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Engn, Dept Innovat & Engineered Mat, Midori Ku, Yokohama, Kanagawa 2268502, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2000年 / 39卷 / 9A期

关键词：

MOCVD; Bi4Ti3O12; orientation control; sequential gas supply; thin film;

D O I：

10.1143/JJAP.39.5211

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

C-axis-oriented Bi4Ti3O12 thin films were prepared on (111)Pt/Ti/SiO2/Si substrates by metalorganic chemical vapor de position (MOCVD) using a sequential source gas supply method taking account of the crystal structure of Bi4Ti3O12 along the c-axis. The X-ray diffraction intensities of B4Ti3O12(006) and Bi4Ti3O12(117) increased and decreased, respectively, by the sequential source gas supply method and the conventional continuous source gas supply method. The sequential source gas supply method started from Bi double pulses as effective for the preparation of the c-axis-oriented Bi4Ti3O12 film; and the supply corresponding to a half unit cell per sequence showed high c-axis orientation.

引用

页码：5211 / 5216

页数：6

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