Improvement of quantum efficiency by employing active-layer-friendly lattice-matched InAlN electron blocking layer in green light-emitting diodes

被引：78

作者：

Kim, Hee Jin ^{[1
,2
]}

Choi, Suk ^{[1
,2
]}

Kim, Seong-Soo ^{[1
,2
]}

Ryou, Jae-Hyun ^{[1
,2
]}

Yoder, P. Douglas ^{[1
,2
]}

Dupuis, Russell D. ^{[1
,2
]}

Fischer, Alec M. ^{[3
]}

Sun, Kewei ^{[3
]}

Ponce, Fernando A. ^{[3
]}

机构：

[1] Georgia Inst Technol, Ctr Compound Semicond, Atlanta, GA 30332 USA

[2] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

[3] Arizona State Univ, Dept Phys, Tempe, AZ 85287 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 10期

关键词：

This work was supported by the Department of Energy under Contract No. DE-FC26-08NT01580. Authors also thank SAFC Hitech Inc. for their support. The work at ASU was partially supported by a gift from Nichia Corporation. R.D.D. acknowledges additional support of the Steve W. Chaddick Endowed Chair in Electro-Optics and the Georgia Research Alliance;

D O I：

10.1063/1.3353995

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Improvement of the internal quantum efficiency in green-light emitting diodes has been achieved using lattice-matched InAlN electron-blocking layers. Higher electroluminescence intensities have been obtained due to better electron confinement in the device active region. The device efficiency has also been found to significantly depend on the InAlN growth temperature. Optimized InAlN growth at similar to 840 degrees C results in a lower growth rate and longer growth times than at similar to 780 degrees C. The observed reduction in emission efficiency for InAlN layers grown at higher temperatures is possibly attributed to thermal damage in the green active region. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3353995]

引用

页数：3

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