Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer

被引：152

作者：

Choi, Suk ^{[1
,2
]}

Kim, Hee Jin ^{[1
,2
]}

Kim, Seong-Soo ^{[1
,2
]}

Liu, Jianping ^{[1
,2
]}

Kim, Jeomoh ^{[1
,2
]}

Ryou, Jae-Hyun ^{[1
,2
]}

Dupuis, Russell D. ^{[1
,2
,3
]}

Fischer, Alec M. ^{[4
]}

Ponce, Fernando A. ^{[4
]}

机构：

[1] Georgia Inst Technol, Ctr Cpds Semicond, Atlanta, GA 30332 USA

[2] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

[3] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA

[4] Arizona State Univ, Dept Phys, Tempe, AZ 85287 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 22期

关键词：

aluminium compounds; electroluminescence; gallium compounds; III-V semiconductors; indium compounds; light emitting diodes; semiconductor devices; PERFORMANCE;

D O I：

10.1063/1.3441373

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InAlN electron-blocking layers (EBLs) are shown to improve the emission intensity and to mitigate the efficiency droop problem in III-nitride-based visible light-emitting diodes (LEDs). Using an In(0.18)Al(0.82)N EBL in blue LEDs, we have achieved a significant improvement in the electroluminescence emission intensity and a mitigated efficiency droop compared to similar LEDs without an EBL or with an Al(0.2)Ga(0.8)N EBL. This indicates that an In(0.18)Al(0.82)N EBL is more effective in electron confinement and reduces the efficiency droop possibly caused by carrier spill-over than conventional AlGaN EBLs. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3441373]

引用

页数：3

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