High-speed solar-blind photodetectors with indium-tin-oxide Schottky contacts

被引:57
作者
Biyikli, N [1 ]
Kimukin, I
Kartaloglu, T
Aytur, O
Ozbay, E
机构
[1] Bilkent Univ, Dept Elect & Elect Engn, TR-06533 Ankara, Turkey
[2] Bilkent Univ, Dept Phys, TR-06533 Ankara, Turkey
关键词
D O I
10.1063/1.1566459
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report AlGaN/GaN-based high-speed solar-blind photodetectors with indium-tin-oxide Schottky contacts. Current-voltage, spectral responsivity, and high-frequency response characterizations were performed on the fabricated Schottky photodiodes. Low dark currents of <1 pA at 20 V reverse bias and breakdown voltages larger than 40 V were obtained. A maximum responsivity of 44 mA/W at 263 nm was measured, corresponding to an external quantum efficiency of 21%. True solar-blind detection was ensured with a cutoff wavelength of 274 nm. Time-based high-frequency measurements at 267 nm resulted in pulse responses with rise times and pulse-widths as short as 13 and 190 ps, respectively. The corresponding 3-dB bandwidth was calculated as 1.10 GHz. (C) 2003 American Institute of Physics.
引用
收藏
页码:2344 / 2346
页数:3
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