Nitride-based LEDs with modulation-doped Al0.12Ga0.88N-GaN superlattice structures

被引：37

作者：

Wen, TC ^{[1
]}

Chang, SJ

Lee, CT

Lai, WC

Sheu, JK

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan

[3] Natl Cheng Kung Univ, Ctr Micro Nanotechnol, Tainan 70101, Taiwan

[4] Natl Cent Univ, Inst Opt Sci, Chungli 320, Taiwan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2004年 / 51卷 / 10期

关键词：

current spreading; electroluminescence (EL); electrostatic discharge (ESD); light-emitting diodes (LED); modulation-doped AlGaN-GaN superlattice structures;

D O I：

10.1109/TED.2004.835985

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Modulation doped Al0.12Ga0.88N-GaN superlattice structures were used to spread pulse current in nitride-based light emitting diodes (LEDs). Although the 20-mA electroluminescence (EL) intensity of the LEDs with modulation-doped AlGaN-GaN superlattice structures was found to be 10% smaller than that of the conventional LEDs, it was found that LEDs with the AlGaN-GaN superlattice structures could all endure a 2000-V reverse electrostatic discharge (ESD) pulse voltage. Some LEDs can even survive with an 8000-V reverse ESD pulse voltage, which is equivalent to "Class 3B" of Human Body Mode testing.

引用

页码：1743 / 1746

页数：4

共 17 条

[1] High brightness InGaN green LEDs with an ITO on n++-SPS upper contact [J].

Chang, CS ;

Chang, SJ ;

Su, YK ;

Kuo, CH ;

Lai, WC ;

Lin, YC ;

Hsu, YP ;

Shei, SC ;

Tsai, JM ;

Lo, HM ;

Ke, JC ;

Shen, JK .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (11) :2208-2212

[2] Highly reliable nitride-based LEDs with SPS plus ITO upper contacts [J].

Chang, SJ ;

Chang, CS ;

Su, YK ;

Chuang, RW ;

Lin, YC ;

Shei, SC ;

Lo, HM ;

Lin, HY ;

Ke, JC .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2003, 39 (11) :1439-1443

[3] Improved ESD protection by combining InGaN-GaN MQW LEDs with GaN Schottky diodes [J].

Chang, SJ ;

Chen, CH ;

Su, YK ;

Sheu, JK ;

Lai, WC ;

Tsai, JM ;

Liu, CH ;

Chen, SC .

IEEE ELECTRON DEVICE LETTERS, 2003, 24 (03) :129-131

[4] InGaN-GaN multiquantum-well blue and green light-emitting diodes [J].

Chang, SJ ;

Lai, WC ;

Su, YK ;

Chen, JF ;

Liu, CH ;

Liaw, UH .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2002, 8 (02) :278-283

[5] 400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes [J].

Chang, SJ ;

Kuo, CH ;

Su, YK ;

Wu, LW ;

Sheu, JK ;

Wen, TC ;

Lai, WC ;

Chen, JF ;

Tsai, JM .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2002, 8 (04) :744-748

[6] High-efficiency InGaN-GaN MQW green light-emitting diodes with CART and DBR structures [J].

Chen, CH ;

Chang, SJ ;

Su, YK ;

Chi, GC ;

Sheu, JK ;

Chen, JF .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2002, 8 (02) :284-288

[7]

*ESDS, 1998, COMP SENS CLASS HUM

[8]

INOUE T, 1999, H11040848

[9] Investigation on ESD-stressed GaN/InGaN-on-sapphire blue LEDs [J].

Meneghesso, G ;

Podda, S ;

Vanzi, M .

MICROELECTRONICS RELIABILITY, 2001, 41 (9-10) :1609-1614

[10] InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices [J].

Nakamura, S ;

Senoh, M ;

Nagahama, S ;

Iwasa, N ;

Yamada, T ;

Matsushita, T ;

Kiyoku, H ;

Sugimoto, Y ;

Kozaki, T ;

Umemoto, H ;

Sano, M ;

Chocho, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (12A) :L1568-L1571

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