Low-temperature deposition of high-quality silicon dioxide films by sputtering-type electron cyclotron resonance plasma

被引:25
作者
Nakashima, H
Furukawa, K
Liu, YC
Gao, DW
Kashiwazaki, Y
Muraoka, K
Shibata, K
Tsurushima, T
机构
[1] KYUSHU UNIV,GRAD SCH ENGN SCI,DEPT ENERGY CONVERS,KASUGA,FUKUOKA 816,JAPAN
[2] KYUSHU UNIV,GRAD SCH INFORMAT SCI & ELECT ENGN,FUKUOKA 812,JAPAN
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1997年 / 15卷 / 04期
关键词
D O I
10.1116/1.580664
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
High-quality silicon dioxide films have been deposited at 130 degrees C by a sputtering technique using an electron cyclotron resonance microwave plasma. Film properties have been studied as a function of O-2 flow rate in the range of 2-8 seem with a constant Ar flow rate of 8 sccm when other plasma conditions were a microwave power of 700 W, and a radio frequency power of 700 W supplied to a target for sputtering. Dielectric breakdown characteristics have been investigated by ramp current-voltage measurements. Films deposited with an O-2 flow rate of 5.3 sccm have a dielectric breakdown field of 10 MV/cm, which is close to that of thermally grown silicon dioxide film. The deposition rate was as high as 23 nm/min. Structural properties of films have also been characterized by ellipsometry and infrared absorption spectroscopy, showing that films with O-2 flow rates above 4 sccm have near-stoichiometric composition. (C) 1997 American Vacuum Society.
引用
收藏
页码:1951 / 1954
页数:4
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