Gain characteristic of continuous-wave InGaN multiple quantum well laser diodes during life testing

被引：10

作者：

Goddard, LL ^{[1
]}

Kneissl, M ^{[1
]}

Bour, DP ^{[1
]}

Johnson, NM ^{[1
]}

机构：

[1] Xerox Corp, Palo Alto Res Ctr, Palo Alto, CA 94304 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 88卷 / 07期

关键词：

D O I：

10.1063/1.1290258

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A method to measure small changes in gain and distributed loss in laser diodes during life testing is described. The evolution of the gain spectrum was computed by measuring the true spontaneous emission spectrum and the lasing wavelength of the diode with time. This method was applied to investigate the gain spectrum of InGaN multiple quantum well ridge waveguide laser diodes operating under continuous-wave (cw) conditions during diode life testing. During lasing there were large changes in the light output power versus current characteristic, but no significant change in the forward current-voltage characteristic. No catastrophic failure occurred; the light output power decreased continuously during life testing until the device stopped lasing under cw conditions. We observed an increase in pulsed threshold current of 15(+/- 1)%, a decrease in gain at fixed current of 11(+/- 2)%, and a slight increase in the total optical losses of 4(+/- 2)%. These changes occurred primarily while the device was lasing under cw conditions. (C) 2000 American Institute of Physics. [S0021-8979(00)10319-6].

引用

页码：3820 / 3823

页数：4

共 13 条

[1] MEASUREMENT AND CALCULATION OF SPONTANEOUS RECOMBINATION CURRENT AND OPTICAL GAIN IN GAAS-ALGAAS QUANTUM-WELL STRUCTURES [J].

BLOOD, P ;

KUCHARSKA, AI ;

JACOBS, JP ;

GRIFFITHS, K .

JOURNAL OF APPLIED PHYSICS, 1991, 70 (03) :1144-1156

[2] GAIN SPECTRA IN GAAS DOUBLE-HETEROSTRUCTURE INJECTION LASERS [J].

HAKKI, BW ;

PAOLI, TL .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (03) :1299-1306

[3] MEASUREMENT OF GAIN AND ABSORPTION-SPECTRA IN ALGAAS BURIED HETEROSTRUCTURE LASERS [J].

HENRY, CH ;

LOGAN, RA ;

MERRITT, FR .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) :3042-3050

[4] Room-temperature continuous-wave operation of InGaN multiple-quantum-well laser diodes with an asymmetric waveguide structure [J].

Kneissl, M ;

Bour, DP ;

Van de Walle, CG ;

Romano, LT ;

Northrup, JE ;

Wood, RM ;

Teepe, M ;

Johnson, NM .

APPLIED PHYSICS LETTERS, 1999, 75 (04) :581-583

[5] Room-temperature continuous-wave operation of GaInN/GaN multiquantum well laser diode [J].

Kobayashi, T ;

Nakamura, F ;

Naganuma, K ;

Tojyo, T ;

Nakajima, H ;

Asatsuma, T ;

Kawai, H ;

Ikeda, M .

ELECTRONICS LETTERS, 1998, 34 (15) :1494-1495

[6] Room-temperature continuous wave operation of InGaN laser diodes with vertical conducting structure on S1C substrate [J].

Kuramata, A ;

Kubota, S ;

Soejima, R ;

Domen, K ;

Horino, K ;

Tanahashi, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1998, 37 (11B) :L1373-L1375

[7] Room-temperature continuous-wave operation of InGaN multi-quantum-well laser diodes grown on an n-GaN substrate with a backside n-contact [J].

Kuramoto, M ;

Sasaoka, C ;

Hisanaga, Y ;

Kimura, A ;

Yamaguchi, AA ;

Sunakawa, H ;

Kuroda, N ;

Nido, M ;

Usui, A ;

Mizuta, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1999, 38 (2B) :L184-L186

[8] Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetime [J].

Nakamura, S ;

Senoh, M ;

Nagahama, S ;

Iwasa, N ;

Yamada, T ;

Matsushita, T ;

Sugimoto, Y ;

Kiyoku, H .

APPLIED PHYSICS LETTERS, 1997, 70 (07) :868-870

[9] High-power, long-lifetime InGaN/GaN/AlGaN-based laser diodes grown on pure GaN substrates [J].

Nakamura, S ;

Senoh, M ;

Nagahama, S ;

Iwasa, N ;

Yamada, T ;

Matsushita, T ;

Kiyoku, H ;

Sugimoto, Y ;

Kozaki, T ;

Umemoto, H ;

Sano, M ;

Chocho, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1998, 37 (3B) :L309-L312

[10] Violet InGaN/GaN/AlGaN-based laser diodes with an output power of 420 mW [J].

Nakamura, S ;

Senoh, M ;

Nagahama, S ;

Iwasa, N ;

Yamada, T ;

Matsushita, T ;

Kiyoku, H ;

Sugimoto, Y ;

Kozaki, T ;

Umemoto, H ;

Sano, M ;

Chocho, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1998, 37 (6A) :L627-L629

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