Suppressing the parasitic bipolar action in fully-depleted MOSFET's/SIMOX by using back-side bias-temperature treatment

被引：5

作者：

Koizumi, H ^{[1
]}

Shimaya, M ^{[1
]}

Tsuchiya, T ^{[1
]}

机构：

[1] NTT, Syst Elect Labs, Kanagawa 2430198, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1998年 / 45卷 / 04期

关键词：

bias-temperature; fully-depleted MOSFET; parasitic bipolar action; SIMOX;

D O I：

10.1109/16.662805

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new suppression method for parasitic bipolar action is presented for fully-depleted surface-channel nMOSFET's on SIMOX-structures by using the back-side bias-temperature (BSBT) treatment technique, After 10 h of BSBT treatment, increase in source-drain breakdown voltage of about 300 mV was obtained, A peculiar hot-carrier degradation is also suppressed and device lifetime is improved by 20 times, The device characteristics are not degraded by BSBT treatment because it induces a bias stress to back interface between the buried oxide and the active silicon layer, which does not affect the front channel, Influences of BSBT stress to the back interface were investigated using several methods, The suppression mechanism proposed is the generation of charges and interface traps at the back interface.

引用

页码：933 / 938

页数：6

共 17 条

[1] DEEP AND SHALLOW ELECTRON TRAPPING IN THE BURIED OXIDE LAYER OF SIMOX STRUCTURES [J].