Loss measurements on semiconductor lasers by Fourier analysis of the emission spectra

被引:28
作者
Hofstetter, D [1 ]
Thornton, RL [1 ]
机构
[1] Xerox Corp, Palo Alto Res Ctr, Palo Alto, CA 94304 USA
关键词
D O I
10.1063/1.120771
中图分类号
O59 [应用物理学];
学科分类号
摘要
We present a study on a novel method for the determination of the cavity losses in semiconductor lasers. The method we use involves Fourier analysis of the Fabry-Perot mode spectrum when operating the device below lasing threshold. The observation of the decay rate of higher order harmonics in the Fourier analysis of the spectra allows us to determine the amount of cavity propagation loss/gain. A comparison between experimental and calculated data for an AlGaInP laser at 670 nm showed good agreement up to an injection current of 0.93xI(th). This method therefore provides a generalization of the Fabry-Perot contrast measurement method for extracting cavity losses from spectral information. (C) 1998 American Institute of Physics.
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页码:404 / 406
页数:3
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