Ge metal-insulator-semiconductor structures with Ge3N4 dielectrics by direct nitridation of Ge substrates

被引：88

作者：

Maeda, T

Yasuda, T

Nishizawa, M

Miyata, NR

Morita, Y

Takagi, S

机构：

[1] Natl Inst Adv Ind Sci & Technol ASRC AIST, MIRAI Project, Adv Semicond Res Ctr, Tsukuba, Ibaraki 3058562, Japan

[2] ASRC AIST, MIRAI Project, Tsukuba, Ibaraki 3058569, Japan

[3] Univ Tokyo, Bunkyo Ku, Tokyo 1138656, Japan

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 15期

关键词：

D O I：

10.1063/1.1805194

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated Ge metal-insulator-semiconductor structures with ultrathin pure germanium nitride (Ge3N4) films by the direct nitridation of germanium (Ge) substrates. The plasma-enhanced nitridation technique was used with dc plasma source at low temperatures. Capacitance-voltage characteristics with no hysteresis and capacitance equivalent thickness of 1.23 nm have been achieved. (C) 2004 American Institute of Physics.

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页码：3181 / 3183

页数：3

相关论文

共 11 条

[1] SELECTIVE THERMAL - AS OPPOSED TO NONSELECTIVE PLASMA - NITRIDATION OF SI-GE RELATED MATERIALS EXAMINED BY IN-SITU PHOTOEMISSION TECHNIQUES [J].

AUBEL, D ;

DIANI, M ;

KUBLER, L ;

BISCHOFF, JL ;

BOLMONT, D .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1995, 187 :319-323

[2]

Chui CO, 2002, IEEE ELECTR DEVICE L, V23, P473, DOI [10.1109/LED.2002.801319, 10.1009/LED.2002.801319]

[3] SURFACE-STATES AT THE GAAS GERMANIUM NITRIDE INTERFACE [J].

CHUNG, Y ;

LANGER, DW ;

SINGH, HP ;

WOOLLAM, JA .

THIN SOLID FILMS, 1983, 103 (1-2) :193-199

[4] PROPERTIES OF AMORPHOUS TIN-NITROGEN FILMS OBTAINED VIA REACTIVE CATHODE SPUTTERING - NATURE OF METAL-NITROGEN BOND [J].

HANTZPERGUE, JJ ;

REMY, JC .

THIN SOLID FILMS, 1975, 30 (02) :205-214

[5] PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF SILICON, GERMANIUM, AND TIN NITRIDE THIN-FILMS FROM METALORGANIC PRECURSORS [J].

HOFFMAN, DM ;

RANGARAJAN, P ;

ATHAVALE, SD ;

ECONOMOU, DJ ;

LIU, JR ;

ZHENG, ZS ;

CHU, WK .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1995, 13 (03) :820-825

[6] THIN GERMANIUM NITRIDE FILMS GROWN BY THERMAL-REACTION PROCESS [J].

HUA, Q ;

ROSENBERG, J ;

YE, J ;

YANG, ES .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (12) :8969-8973

[7] PREPARATION OF GERMANIUM NITRIDE FILMS ON STAINED GERMANIUM CRYSTAL SURFACE [J].

IGARASHI, Y ;

KURUMADA, K ;

NIIMI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1968, 7 (03) :300-&

[8] PLASMA-DEPOSITED GERMANIUM NITRIDE GATE INSULATORS FOR INDIUM-PHOSPHIDE METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS [J].

JOHNSON, GA ;

KAPOOR, VJ .

JOURNAL OF APPLIED PHYSICS, 1991, 69 (06) :3616-3622

[9] GENERAL COMPARISON OF THE SURFACE PROCESSES INVOLVED IN NITRIDATION OF SI(100)-2X1 BY NH3 AND IN SINX FILM DEPOSITION - A PHOTOEMISSION-STUDY [J].

KUBLER, L ;

BISCHOFF, JL ;

BOLMONT, D .

PHYSICAL REVIEW B, 1988, 38 (18) :13113-13123

[10] INTERFACE CHARACTERISTICS OF GE3N4-(N-TYPE) GAAS MIS DEVICES [J].

PANDE, KP ;

CHEN, ML ;

YOUSUF, M ;

LALEVIC, B .

SOLID-STATE ELECTRONICS, 1981, 24 (12) :1107-1109