Luminescence from growth topographic features in GaN:Si films

被引：21

作者：

Zaldivar, MH ^{[1
]}

Fernandez, P ^{[1
]}

Piqueras, J ^{[1
]}

机构：

[1] Univ Complutense, Fac Fis, Dept Fis Mat, E-28040 Madrid, Spain

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 83卷 / 01期

关键词：

D O I：

10.1063/1.366661

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Cathodoluminescence (CL) in the scanning electron microscope is used to investigate the nature of defects responsible for the luminescence associated with round and hexagonal-like topographic features of GaN:Si films. Round hillocks of the size of a few microns, which sometimes have a nanopipe related central hole, do not influence the luminescence emission of the film. Hillocks with sizes of several tens of microns show a marked CL contrast at the center and at the border. The origin of the observed contrast is attributed to a growth induced inhomogeneous distribution of point defects and impurities. Radiation with the electron beam of the scanning microscope causes a decrease of the CL intensity without spectral changes. (C) 1998 American Institute of Physics.

引用

页码：462 / 465

页数：4

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