INFLUENCE OF NUCLEATION ON THE KINETICS OF BORON PRECIPITATION IN SILICON

被引：38

作者：

LANDI, E

GUIMARAES, S

SOLMI, S

机构：

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1987年 / 44卷 / 02期

关键词：

D O I：

10.1007/BF00626414

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：135 / 141

页数：7

共 30 条

[11] THEORY OF DIFFUSION-LIMITED PRECIPITATION [J].

HAM, FS .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 6 (04) :335-351

[12] VLSI PROCESS MODELING - SUPREM-III [J].

HO, CP ;

PLUMMER, JD ;

HANSEN, SE ;

DUTTON, RW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) :1438-1453

[13]

Hofker W. K., 1973, Applied Physics, V2, P265, DOI 10.1007/BF00889509

[14] CHARACTERISTICS OF RAPID THERMAL ANNEALING IN ION-IMPLANTED SILICON [J].

HOLLAND, OW ;

NARAYAN, J ;

FATHY, D ;

WILSON, SR .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (03) :905-909

[15] ELECTRICAL CHARACTERIZATION OF P+/N SHALLOW JUNCTIONS OBTAINED BY BORON IMPLANTATION INTO PREAMORPHIZED SILICON [J].

LANDI, E ;

SOLMI, S .

SOLID-STATE ELECTRONICS, 1986, 29 (11) :1181-1187

[16] THE SOLID SOLUBILITY AND THERMAL-BEHAVIOR OF METASTABLE CONCENTRATIONS OF AS IN SI [J].

LIETOILA, A ;

GIBBONS, JF ;

SIGMON, TW .

APPLIED PHYSICS LETTERS, 1980, 36 (09) :765-768

[17] THE KINETICS OF PRECIPITATION FROM SUPERSATURATED SOLID SOLUTIONS [J].

LIFSHITZ, IM ;

SLYOZOV, VV .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 19 (1-2) :35-50

[18]

Lindhard J., 1963, MAT FYS MEDD DAN VID, V33, P1, DOI DOI 10.1002/ADMA.200904153

[19] ELECTRON-BEAM ANNEALING OF SEMICONDUCTORS BY MEANS OF A SPECIFICALLY DESIGNED ELECTRON-GUN [J].

LULLI, G ;

MERLI, PG .

MATERIALS CHEMISTRY AND PHYSICS, 1983, 9 (1-3) :285-294

[20] 3-DIMENSIONAL MONTE-CARLO SIMULATIONS .2. RECOIL PHENOMENA [J].

MAZZONE, AM .

IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 1985, 4 (01) :110-117

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